Fabrication of a blade from a wafer having a blade separation structure

ABSTRACT

A method for fabricating a cutting blade ( 56 ) from a wafer ( 130 ) is disclosed. The wafer ( 130 ) is etched to define part of the perimeter of the blade ( 56 ). This etch also defines a blade support ( 131 ) that maintains a structural interconnection between the blade ( 56 ) and the wafer ( 130 ). A score ( 132 ) is formed across at least part of the blade support tab ( 131 ). Fracturing the blade support tab ( 131 ) at least generally along the score ( 132 ) at some point in time after the completion of the etch facilitates the separation of the blade ( 56 ) from the wafer ( 130 ).

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This patent application is a continuation of, and claims priorityunder 35 U.S.C. §120 to, U.S. patent application Ser. No. 10/390,484,that is entitled “ALIGNMENT OF MICROKERATOME BLADE TO BLADE HANDLE,” andthat was filed on Mar. 17, 2003; U.S. patent application Ser. No.10/390,357, that is entitled “MOUNTING A BLADE HANDLE ON A MICROKERATOMEBLADE”, and that was filed on Mar. 17, 2003; U.S. patent applicationSer. No. 10/390,353, that is entitled “SEPARATING A MICROKERATOME BLADEFROM A WAFER”, and that was filed on Mar. 17, 2003; and U.S. patentapplication Ser. No. 10/390,488, that is entitled “MULTI-FIXTUREASSEMBLY OF CUTTING TOOLS”, and that was filed on Mar. 17, 2003. Theentire disclosure of each of the above-noted patent applications isincorporated by reference in their entirety herein.

FIELD OF THE INVENTION

[0002] The present invention generally relates to the fabrication of oneor more cutting blades from an appropriate substrate and, moreparticularly, to the use of a score to facilitate the separation ofthese blades from a remainder of the substrate at the appropriate time.

BACKGROUND OF THE INVENTION

[0003] Many types of blades exist for many types of applications. Bladesare used for cutting biological materials of various types and forvarious applications. One application that is becoming quite prevalentis the cutting of human eye tissue in relation to a LASIK eye procedure.Here the blade is used in an automated instrument that is commonlyreferred to as microkeratome or the like. The blade is used to cut athin protective layer of corneal tissue from the patient's eye.Typically the cut is made such that this tissue remains attached to thepatient's eye, and thus it is commonly referred to as a “flap.”Positioning the flap away from the underlying area (e.g., by apivotal-like motion about the remaining interconnection with thepatient's eye) exposes the desired portion of the patient's cornea. Alaser is then used to remove tissue from the patient's cornea or tootherwise “shape” the cornea to address associated refractive errors.Thereafter the flap is placed back in its original position. Within afew minutes the flap reattaches to the patient's eye, without the use ofsutures.

[0004] Conventional microkeratome blades are stainless steel. There area number of issues with these types of blades. One is that the bladeedge is typically examined under a microscope before being used in aLASIK procedure in an attempt to identify deficiencies in the bladeedge. Various discontinuities (e.g., burrs) may exist along the bladeedge based upon the way in which the blade edge is formed (e.g.,mechanical grinding, polishing) and the material from which the blade isformed, as well as because of the vulnerability of the cutting edgeafter being formed. Certain deficiencies associated with the blade edgemay adversely affect the performance of the blade in cutting the eyeflap for a LASIK procedure. Another is that the blade edge ofconventional stainless steel microkeratome blades will typically degradeafter cutting a single eye flap. Nonetheless, a common practice is touse the same microkeratome blade to cut a flap on both of the patient'seyes in a single office visit where the LASIK procedure is performed oneach eye.

[0005] Most microkeratome blades are mounted on a blade handle, that isin turn mounted on a head assembly of the microkeratome. How themicrokeratome blade is aligned to the blade handle can have asignificant impact on the blade's cutting performance when installed onthe microkeratome. Certain conventional stainless steel microkeratomeblades have a mark on a surface thereof where the blade handle must beoptically aligned therewith. Other conventional stainless steelmicrokeratome blades have holes that extend through the body of theblade. The corresponding blade handle has pins that are disposed withinthese holes. How these alignment marks or holes are formed on thecutting blade may have an impact on the accuracy with which the cuttingedge of the blade is disposed relative to a reference surface of theblade handle. This in turn will affect the accuracy of the positioningof the blade's cutting edge when installed in the microkeratome.

[0006] Other types of microkeratome blades have been proposed. One isdiamond in which a crystal is typically cleaved to define a cuttingedge. Another is silicon. Both isotropic and anisotropic etches havebeen suggested as options for fabricating a cutting edge for amicrokeratome blade or the like from a silicon wafer. Notwithstandingthe recognition of these various types of options in the art, stainlesssteel microkeratome blades still dominate the market. In fact, theinventors associated with the subject patent application do not haveknowledge of any silicon microkeratome blade that is commerciallyavailable.

[0007] There are of course many other types of applications where ablade is used to cut biological tissue (e.g., hand-held surgicalinstruments, scalpels), as well as many other types of non-biologicalcutting applications. One or more of these cutting applications maybenefit from the ability to effectively fabricate cutting blades in abatch-type process using an anisotropic etch. Certain cuttingapplications may benefit from the ability to more accurately align theblade's cutting edge to an alignment surface on a blade handle to whichthe blade is mounted. Still other cutting applications may benefit fromthe ease with which a blade angle may be selected for the desiredapplication and then fabricated using an anisotropic etch.

BRIEF SUMMARY OF THE INVENTION

[0008] A first aspect of the present invention generally relates tousing an etch to define at least part of at least one cutting blade froma substrate, as well as to define at least one score on this substratefor separating its corresponding blade(s) from the substrate. Morespecifically, at least one cutting edge surface for a first blade isdefined by etching the substrate. Multiple cutting edge surfaces may beformed in association with any particular blade, each of which may havethe characteristics of or relating to a first cutting edge surface to bedescribed herein in relation to the first blade. It should beappreciated that multiple blades may be formed from the same substrateas well, each of which may have the characteristics of or relating tothe first blade to be described herein. At least one score that isassociated with the first blade is also defined by etching this samesubstrate (hereafter a “first score”, although multiple scores may beformed in association with the first blade, and each of which may havethe characteristics of or relating to the first score to be describedherein). This first score may be used to facilitate the separation ofthe first blade from the substrate at the appropriate time, althoughthis separation is not a requirement of the first aspect.

[0009] Various refinements exist of the features noted in relation tothe first aspect of the present invention. Further features may also beincorporated in the first aspect of the present invention as well. Theserefinements and additional features may exist individually or in anycombination. Any suitable substrate may be utilized by the first aspect,for instance a wafer that is appropriate for use in semiconductorprocessing. Representative suitable materials for the substrate includeceramic, silicon, and quartz. Single crystal materials in general aredesirable for the substrate in the case of the first aspect (e.g.,single crystal silicon; single crystal quartz). Utilizing a singlecrystal material for the substrate, where there is at least one etchantthat is selective to at least one crystal plane of the particular singlecrystal material, allows for a desirable formation of the first cuttingedge surface that may define a cutting edge for the first blade, as wellas possibly other features of the first blade (e.g., at least oneregistration feature for the first blade). That is, those single crystalmaterials that may be etched to a particular crystal plane, and have theetch in effect stop after reaching this particular crystal plane, may beparticularly suited for use in the fabrication of the first blade inaccordance with the first aspect.

[0010] The first blade may remain part of or interconnected with thesubstrate for some time after its first cutting edge surface is definedby an etch in the case of the first aspect. For instance, the substratewith this first blade as a part thereof may be transferred from an etchbath to a first fixture to allow a first blade handle to be attached tothe first blade while still attached to the substrate. The substrate maythen be transferred from this first fixture to a second fixture wherethe first blade may be separated from the substrate. Separation againmay utilize the first score formed by an etch in accordance with thefirst aspect. For instance, the substrate may be fractured at leastgenerally along the first score to facilitate the separation of thefirst blade from the substrate.

[0011] The etching of the first cutting edge surface and the first scorein accordance with the first aspect may be executed at the same timeusing a single etchant. In one embodiment, an anisotropic etch is used.It should be appreciated that although the same etch may be used, thetime required to completely define each of the various structures maynot necessarily be the same. The corresponding etch that defines thefirst cutting edge surface and the first score each may be in the formof a chemical etch. The same etch that defines the first cutting edgesurface for the first blade may also simultaneously define other aspectsof or structure associated with the first blade. For instance, this etchmay define a first cutting edge for the first blade that uses the firstcutting edge surface. In one embodiment, the first score is etched so asto be parallel with this first cutting edge. The etch that defines thefirst cutting edge surface for the first blade may also define a firstperimeter portion of the first blade (i.e., something less than theentire perimeter of the first blade, so that it remains attached to thesubstrate at least at one location) by etching through the entirevertical extent or thickness of the substrate in accordance with adesired pattern.

[0012] At least one blade support tab that maintains a structuralinterconnection between the first blade and the substrate (hereafter a“first blade support tab”, although multiple blade support tabs may beformed in relation to the first blade, and each of which may have thecharacteristics of or relating to the first blade support tab to bedescribed herein) may also be defined by an etch in the case of thefirst aspect. A pair of spaced openings that extend down through theentire vertical extent of thickness of the substrate may be created byan etch to define this first blade support tab. The corresponding etchthat defines the first cutting edge surface, the first score, and thefirst blade support tab may be executed at the same time (although notnecessarily of the same duration) using a single etchant (e.g., byimmersing the substrate within an appropriate etch bath, withappropriate openings having previously been formed in an etch mask thatis on the substrate). This etch may define the entire perimeter of thefirst blade except where the first blade support tab merges into thefirst blade. The remainder of the perimeter of the first blade may bedefined by the separation of the first blade from the substrate alongthe first score formed on the first blade support tab.

[0013] The first score may be etched in the substrate so as to extendacross at least a portion of the above-noted first blade support tab inaccordance with the first aspect. In one embodiment, the first score isdisposed along the length dimension of the first blade support tab at alocation where the first blade support tab is of its minimum width(e.g., so that the shape of the first blade support tab acts as a stressconcentrator, to cause the greatest stress to occur at the location ofthe first score to further facilitate the fracture). The first bladesupport tab may be shaped to generate the greatest stress at thelocation of the first score to further facilitate the fracture. Inanother embodiment, the first score extends across only part of thefirst blade support tab (e.g., the first score does not extend acrossthe entire width of the first blade support tab in this case).Preferably, the pair of opposite ends of the first score (the distancebetween which defines a length dimension for the first score) are eachspaced from one of the two sides or side edges of the first bladesupport tab (the distance between the two sides defining the widthdimension of the first blade support tab). Another way to characterizethis first score is that it has a pair of ends that do not intersectwith any opening that extends completely through the substrate. Openingsthat extend completely through the substrate again may be used to definea portion of a perimeter of the first blade and also may be used todefine the first blade support tab.

[0014] The first blade may have a pair of notches formed on a firstperimeter wall of the first blade (e.g., a wall that defines at leastpart of the perimeter of the first blade) in the case of the firstaspect. This first perimeter wall may be disposed at any appropriatelocation along the perimeter of the first blade. The above-noted firstblade support tab may merge into the first blade at a location that isbetween this pair of notches. The first score may be positioned at alocation anywhere along a length dimension of the first blade supporttab, but the first score is preferably offset from other portions of thefirst perimeter wall of the first blade having these notches. Any jaggededges or the like that remain after separating the first blade from thesubstrate using the first score will then be recessed relative to otherportions of the first perimeter wall of the first blade. That is, whendisposing the first perimeter wall of the first blade on a flatsupporting surface, the surface defined by fracturing the first bladesupport tab along the first score preferably will be spaced from thissupporting surface. Separating the first blade from the substrate atleast generally along the first score may then serve to interconnect thenoted pair of notches to define one larger notch on the first perimeterwall of the first blade. The first score may extend entirely through thesubstrate, but more preferably only extends through a portion of thethickness of the substrate in accordance with the first aspect. In oneembodiment, the first score is etched so as to have a depth that iswithin a range of about 2% to about 75% of the thickness of thesubstrate. In another embodiment, the first score is etched so as tohave a depth that is within a range of about 2% to about 5% of thethickness of the substrate. In yet another embodiment, the first scoreis etched so as to have a depth that is within a range of about 10microns to about 30 microns.

[0015] The first score that is etched in accordance with the firstaspect may be of any appropriate configuration, but is preferablyconfigured so as to allow the fracture to occur in an at least generallypredetermined manner. In one embodiment, the first score is etched toproduce first and second planar score surfaces that intersect along afirst line. The first planar score surface may be parallel with thefirst cutting edge surface that is also defined by an etch in accordancewith the first aspect. Alignment of the first score with acrystallographic plane of the substrate may enhance the separation ofthe first blade from the remainder of the substrate, including aligningthe intersection of the above-noted first and second planar scoresurfaces with such a crystallographic plane.

[0016] The etching of the first cutting edge surface and the first scorein accordance with the first aspect may utilize an appropriate etch maskor the like as generally noted above. In one embodiment, a first maskinglayer is formed on the substrate. A blade mask may then be transferredonto the first masking layer. Appropriate openings may be defined in thefirst masking layer in accordance with the blade mask to allow for theetching of the substrate to define both the first cutting edge surfaceand the first score. In one embodiment, the blade mask is transferredonto the first masking layer using photomasking, masking,photolithography, or microphotolithography, and openings in the firstmasking layer are defined in accordance with the blade mask by wetchemical etching, plasma etching, reactive ion etching, or ion beammilling the first masking layer.

[0017] A second aspect of the present invention generally relates tousing an etch process to define at least part of at least one cuttingblade from a substrate (hereafter a “first blade” although multiplecutting blades may be formed from the same substrate, and each of whichmay have the characteristics of or relating to the first blade to bedescribed herein), to define at least one blade support tab thatmaintains an interconnection between this first blade and a remainder ofthe substrate (hereafter a “first blade support tab”, although multipleblade support tabs may be formed in relation to the first blade, andeach of which may have the characteristics of or relating to the firstblade support tab to be described herein), and to define at least onescore on this substrate for facilitating the separation of the firstblade from the substrate(hereafter a “first score”, although multiplescores may be formed in relation to the blade support tab, and each ofwhich may have the characteristics of or relating to the first score tobe described herein). A first perimeter portion of the first blade isdefined by etching through the substrate. The first blade support tab isalso defined by etching through the substrate, and functions tostructurally interconnect the first blade with a remainder of thesubstrate. The first score is etched across at least a portion of thefirst blade support tab. This first score may be used to facilitate theseparation of the first blade from the substrate at the appropriatetime, although this separation is not a requirement of the secondaspect.

[0018] Various refinements exist of the features noted in relation tothe second aspect of the present invention. Further features may also beincorporated in the second aspect of the present invention as well.These refinements and additional features may exist individually or inany combination. Any suitable substrate may be utilized by the secondaspect, for instance a wafer that is appropriate for use insemiconductor processing. Representative suitable materials for thesubstrate include ceramic, silicon, and quartz. Single crystal materialsin general are desirable for the substrate in the case of the secondaspect (e.g., single crystal silicon; single crystal quartz). Utilizinga single crystal material for the substrate, where there is at least oneetchant that is selective to at least one crystal plane of theparticular single crystal material, allows for a desirable formation ofat least one planar cutting edge surface that may define a cutting edgefor the first blade, as well as possibly other features of the firstblade (e.g., at least one registration feature for the first blade).That is, those single crystal materials that may be etched to aparticular crystal plane, and have the etch in effect stop afterreaching this particular crystal plane, may be particularly suited foruse in the fabrication of the first blade in accordance with the secondaspect.

[0019] The first blade may remain part of or interconnected with thesubstrate through the first blade support tab for some time after beingdefined by an etch in the case of the second aspect. For instance, thesubstrate with the first blade and first blade support tab formedtherefrom may be transferred from an etch bath to a first fixture toallow a first blade handle to be attached to the first blade while stillattached to the substrate through the first blade support tab. Thesubstrate may then be transferred from this first fixture to a secondfixture where the first blade may be separated from the first bladesupport tab, and thereby the substrate. Separation again may utilize thefirst score formed by an etch in accordance with the second aspect. Forinstance, the substrate may be fractured at least generally along thefirst score to facilitate the separation of the first blade from itscorresponding first blade support tab.

[0020] The first perimeter portion associated with the first blade inthe case of the second aspect may define the entire perimeter of thefirst blade, except for that which is defined by separating the firstblade from the first blade support tab at least generally along thefirst score. Consider the case where the first blade support tab mergesinto the first blade along a portion of a perimeter wall of the firstblade (hereafter a “first perimeter wall”). The remainder of the entireperimeter of the first blade may be defined by an etch. Therefore, thefirst perimeter wall of the first blade in this case will have twotextures of sort—one being defined by an etch and the other beingdefined by the fracturing of the substrate at least generally along thefirst score.

[0021] The etching of the first perimeter portion of the first blade,the first blade support tab, and the first score in accordance with thesecond aspect may be executed at the same time using a single etchant(e.g., an anisotropic etch). For instance, the substrate may be immersedin an appropriate etch bath, with appropriate openings having previouslybeen formed in an etch mask that is on the substrate. It should beappreciated that although the same etch may be used, the time requiredto completely define each of the various structures may not necessarilybe the same. The corresponding etch that defines the first perimeterportion of the first blade surface, the first blade support tab, and thefirst score each may be in the form of a chemical etch. The same etchthat defines the first perimeter portion for the first blade may alsosimultaneously define other aspects of or structure associated with thefirst blade. For instance, this etch may define a first cutting edgesurface and a corresponding first cutting edge. In one embodiment, thefirst score is etched so as to be parallel with this first cutting edge.

[0022] The first score may be etched in the substrate so as to extendacross at least a portion of the first blade support tab in accordancewith the second aspect. In one embodiment, the first score is disposedalong the length dimension of the first blade support tab at a locationwhere the first blade support tab is of its minimum width (e.g., so thatthe shape of the first blade support tab acts as a stress concentrator,to cause the greatest stress to occur at the location of the first scoreto further facilitate the fracture). The first blade support tab may beshaped to generate the greatest stress at the location of the firstscore to further facilitate the fracture. In another embodiment, thefirst score extends across only part of the first blade support tab(e.g., the first score does not extend across the entire width of thefirst blade support tab in this case). Preferably, the pair of oppositeends of the first score (the distance between which defines a lengthdimension for the first score) are each spaced from one of the two sidesor side edges of the first blade support tab (the distance between thetwo sides defining the width dimension of the first blade support tab).Another way to characterize this first score is that it has a pair ofends that do not intersect with any opening that extends completelythrough the substrate. Openings that extend completely through thesubstrate again may be used to define a portion of a perimeter of thefirst blade and may be used to define the first blade support tab.

[0023] The first blade may have a pair of notches formed on a firstperimeter wall of the first blade (e.g., a wall that defines at leastpart of the perimeter of the first blade) in the case of the secondaspect. This first perimeter wall may be disposed at any appropriatelocation along the perimeter of the first blade. The first blade supporttab may merge into the first blade at a location that is between thispair of notches. The first score may be positioned at a locationanywhere along a length dimension of the first blade support tab, butthe first score is preferably offset from other portions of the firstperimeter wall of the first blade having these notches. Any jagged edgesor the like that remain after separating the first blade from theremainder of the substrate using the first score will then be recessedrelative other portions of the first perimeter wall of the first blade.That is, when disposing the first perimeter wall of the first blade on aflat supporting surface, the surface defined by fracturing the firstblade support tab along the first score preferably will be spaced fromthis supporting surface. Separating the first blade from the substrateat least generally along the first score may then serve to interconnectthe noted pair of notches to define one larger notch.

[0024] The first score may extend entirely through the substrate, butmore preferably only extends through a portion of the thickness of thesubstrate in accordance with the second aspect. In one embodiment, thefirst score is etched so as to have a depth that is within a range ofabout 2% to about 75% of the thickness of the substrate. In anotherembodiment, the first score is etched so as to have a depth that iswithin a range of about 2% to about 5% of the thickness of thesubstrate. In yet another embodiment, the first score is etched so as tohave a depth that is within a range of about 10 microns to about 30microns.

[0025] The first score that is etched in accordance with the secondaspect may be of any appropriate configuration, but is preferablyconfigured so as to allow the fracture to occur in an at least generallypredetermined manner. In one embodiment, the first score is etched toproduce first and second planar score surfaces that intersect along afirst line. The first planar score surface may be parallel with a firstcutting edge surface for the first blade that also may be defined by anetch in accordance with the second aspect. Alignment of the first scorewith a crystallographic plane of the substrate may enhance theseparation of the first blade from the remainder of the substrate,including aligning the intersection of the above-noted first and secondplanar score surfaces with such a crystallographic plane.

[0026] The etching of the first perimeter portion of the first blade,the first blade support tab, and the first score in accordance with thesecond aspect may utilize an appropriate etch mask or the like asgenerally noted above. In one embodiment, a first masking layer isformed on the substrate. A blade mask may then be transferred onto thefirst masking layer. Appropriate openings may be defined in the firstmasking layer in accordance with the blade mask to allow for the etchingof the substrate to define the first perimeter portion of the firstblade, the first blade support tab, and the first score. In oneembodiment, the blade mask is transferred onto the first masking layerusing photomasking, masking, photolithography, or microphotolithography,and openings in the first masking layer are defined in accordance withthe blade mask by wet chemical etching, plasma etching, reactive ionetching, or ion beam milling the first masking layer.

[0027] A third aspect of the present invention generally relates to thefabrication of at least one blade from a substrate (hereafter a “firstblade”, although multiple blades may be formed from the same substrate,and each of which may have the characteristics of or relating to thefirst blade to be described herein). At least one opening down throughthe entire vertical extent or thickness of substrate is created. Acontinuous opening of this type may be in accordance with a pattern thatdefines a first perimeter portion of the first blade. That is, theentire perimeter of the first blade is not initially defined inaccordance with the third aspect. In this regard, at least one score(hereafter a “first score”, although multiple scores may be formed inrelation to the first blade, and each of which may have thecharacteristics of or relating to the first score to be describedherein) is defined on the substrate. This first score may be used tofacilitate the separation of the first blade from the substrate at theappropriate time, although this separation is not a requirement of thethird aspect. The first score is defined such that its pair of ends donot intersect with any opening.

[0028] Various refinements exist of the features noted in relation tothe third aspect of the present invention. Further features may also beincorporated in the third aspect of the present invention as well. Theserefinements and additional features may exist individually or in anycombination. Any opening of the type utilized by the third aspect may bedefined in any appropriate manner. The first score associated with thethird aspect also may be defined in any appropriate manner. In apreferred embodiment, at least one of these openings is defined by anetch, as is the first score. The various features discussed above inrelation to the first and second aspects may be utilized by this thirdaspect, individually or in any combination.

[0029] A fourth aspect of the present invention generally relates to thefabrication of at least one blade from a substrate (hereafter a “firstblade”, although multiple blades may be formed from the same substrate,and each of which may have the characteristics of or relating to thefirst blade to be described herein). At least one opening down throughthe entire vertical extent or thickness of substrate is created. Acontinuous opening of this type may be in accordance with a pattern thatdefines a first perimeter portion of the first blade. That is, theentire perimeter of the first blade is not initially defined inaccordance with the fourth aspect. At least one score (hereafter a“first score”, although multiple scores may be formed in relation to thefirst blade, and each of which may have the characteristics of orrelating to the first score to be described herein) is also defined onthe substrate. In one embodiment, the first score is formed during thetime that the opening(s) are being defined. Another embodiment has thefirst score being defined by the same technique that defines theopening(s). Yet another embodiment has this first score recessed from anadjacent perimeter wall. In any case, the first score may be used tofacilitate this separation of the first blade from the substrate at theappropriate time, although this separation is not a requirement of thefourth aspect.

[0030] Various refinements exist of the features noted in relation tothe fourth aspect of the present invention. Further features may also beincorporated in the fourth aspect of the present invention as well.These refinements and additional features may exist individually or inany combination. Any opening of the type utilized by the fourth aspectmay be defined in any appropriate manner. The first score associatedwith the fourth aspect also may be defined in any appropriate manner. Ina preferred embodiment, at least one of these openings is defined by anetch, as is the first score. The various features discussed above inrelation to the first and second aspects may be utilized by this fourthaspect, individually or in any combination.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

[0031]FIG. 1 is a side view of one embodiment of a microkeratome.

[0032]FIG. 2A is a top-based perspective view of a cutting blade of thecutting tool utilized by the microkeratome of FIG. 1.

[0033]FIG. 2B is a top view of the cutting blade of the cutting toolutilized by the microkeratome of FIG. 1.

[0034]FIG. 2C is a plan view of a modified registration cavity that maybe used by the cutting blade of FIGS. 2A-B.

[0035]FIG. 3A is a cross-sectional view of the cutting blade of FIG. 2Btake along line 3-3.

[0036]FIG. 3B is a cross-sectional view of an alternative embodiment ofa cutting blade, namely in relation to the definition of its cuttingedge in relation to that illustrated in FIG. 3A.

[0037]FIG. 4 is a side-based perspective view of the cutting toolutilized by the microkeratome of FIG. 1.

[0038]FIG. 5 is a top-based perspective view of the cutting toolutilized by the microkeratome of FIG. 1.

[0039]FIG. 6 is a bottom-based perspective view of the cutting toolutilized by the microkeratome of FIG. 1.

[0040]FIG. 7 is an exploded, perspective view of the cutting toolutilized by the microkeratome of FIG. 1.

[0041]FIG. 8A is a cutaway, bottom view illustrating one registrant ofthe blade handle of the cutting tool utilized by the microkeratome ofFIG. 1, while engaging a registration surface of the cutting blade.

[0042]FIG. 8B is a cutaway, side view illustrating a registrant of ablade handle of the cutting tool utilized by the microkeratome of FIG.1, while engaging a registration surface of the cutting blade.

[0043]FIG. 8C is a cutaway, side view illustrating an alternativeembodiment of a registrant of the blade handle of the cutting toolutilized by the microkeratome of FIG. 1, while engaging the registrationsurface of the cutting blade.

[0044]FIG. 8D is a cutaway, side view illustrating yet anotheralternative embodiment of a registrant of the blade handle of thecutting tool utilized by the microkeratome of FIG. 1, while engaging theregistration surface of the cutting blade.

[0045]FIG. 9A is a cross-sectional view of a pair of masking layersformed on opposing surfaces of a substrate or wafer.

[0046]FIG. 9B is a cross-sectional view after a cutting blade mask hasbeen transferred onto one of the masking layers of FIG. 9A, along withthe resulting openings in the masking layer.

[0047]FIG. 9C is a top plan view of the openings in the masking layerillustrated in FIG. 9B

[0048]FIG. 9D is a cross-sectional view after the substrate/wafer hasbeen etched to define the cutting blade of the cutting tool utilized bythe microkeratome of FIG. 1.

[0049]FIG. 10 is a flowchart illustrating one method of fabricatingmultiple blades from a wafer, including steps that correspond with FIGS.9A-D.

[0050]FIG. 11 is a plan view of a wafer with alignment slots etchedtherein for aligning a blade mask relative to the wafer.

[0051]FIG. 12 is a plan view of a wafer having a plurality of cuttingblades fabricated therefrom in accordance with the protocol of FIG. 10.

[0052]FIG. 13A is an enlarged, plan view of the interconnection betweena single cutting blade and the wafer from FIG. 12.

[0053]FIG. 13B is an enlarged, cutaway view of one embodiment of a bladeseparation score that is only schematically illustrated in FIG. 13A andwhich is used to separate the cutting blade from a corresponding bladesupport tab of the wafer.

[0054]FIG. 13C is an enlarged, plan view of a portion of the rear of thecutting blade of FIG. 13A after its separation from the wafer along thescore of FIG. 13B.

[0055]FIG. 13D is a plan view of a blade mask perimeter profile and oneembodiment of an actual perimeter profile produced when anisotropicallyetching a wafer based upon this blade mask perimeter profile.

[0056]FIG. 14 is a perspective view of one embodiment of a fixture andbase plate for installing blade handles on the cutting blades from thewafer of FIG. 12.

[0057]FIG. 15 is an exploded, perspective view of the blade handlemounting fixture and base plate of FIG. 14.

[0058]FIG. 16 is a perspective view of an upper surface of the bladehandle mounting fixture of FIG. 14.

[0059]FIG. 17 is a perspective view of a lower surface of the bladehandle mounting fixture of FIG. 14.

[0060]FIG. 18 is an enlarged, perspective view of a portion of the uppersurface of the blade handle mounting fixture of FIG. 14 that wouldinterface with one of the cutting blades.

[0061]FIG. 19 is an enlarged, perspective view of a portion of the uppersurface of the blade handle mounting fixture of FIG. 14 when supportingone of the cutting blades.

[0062]FIG. 20 is a perspective view of one embodiment of a bladeseparation fixture for separating blades from the wafer of FIG. 12.

[0063]FIG. 21 is an exploded perspective view of the blade separationfixture of FIG. 20.

[0064]FIG. 22 is an enlarged perspective view of a portion of one of thecutting edge cavities and one of the registrant/pivot cavities used bythe blade separation fixture of FIG. 20.

[0065]FIG. 23 is an enlarged perspective view of one of the cuttingtools from the wafer of FIG. 12 being positioned over the cutting edgecavity and registrant/pivot cavity illustrated in FIG. 22.

DETAILED DESCRIPTION OF THE INVENTION

[0066] The present invention will now be described in relation to theaccompanying drawings which at least assist in illustrating its variouspertinent features. A schematic of one embodiment of a microkeratome 4that may be used to perform a LASIK procedure on a patient's eye (notshown) is illustrated in FIG. 1. The microkeratome 4 generally includesa head assembly 10 having a presser 6, a cut flap receiver 8, and acutting tool receiver 12 with a cutting tool 20 disposed therein.Generally, the presser 6 pushes down on the front of the patient's eyewhile the cutting tool 20 is brought into engagement with and cuts aflap from the patient's eye. Cutting operations generally entail movingthe cutting tool 20 in an appropriate manner relative to the patient'seye (e.g., by oscillation of the cutting tool 20 relative to the headassembly 10 in a direction that is parallel with a cutting edge 80associated with the cutting tool 20 (in and out of the page in the viewpresented in FIG. 1), as well as by a movement of the head assembly 10in the direction of the arrow A). In any case, the resulting eye flap(with a portion typically still remaining attached to the patient) isthen directed into the cut flap receiver 8 formed in the head assembly10 of the microkeratome 4.

[0067] There are two primary components of the cutting tool 20, namely ablade handle 24 and a cutting blade 56. The cutting blade 56 includesthe above-noted cutting edge 80. This cutting edge 80 is formed on itsforward end. The blade handle 24 interfaces with the cutting blade 56 soas to desirably align or register the position of the cutting edge 80 ofthe blade 56 with a microkeratome registration surface 28 of the bladehandle 24 with enhanced accuracy. This microkeratome registrationsurface 28 in turn interfaces with a cutting tool registration surface14 associated with the head assembly 10 of the microkeratome 4. Morespecifically, the cutting tool 20 is disposed within a cutting toolreceiver 12 formed within the head assembly 10. A pair of supportsurfaces 13 of the head assembly 10 engage corresponding portions of abottom surface 64 of the cutting blade 54 to “vertically” support thecutting blade 54 (shown in slightly vertically spaced relation in FIG. 1for clarity), while other portions of this bottom surface 64 of thecutting blade 54 are disposed and maintained in spaced relation to theunderlying portion of the head assembly 10. Moreover, the microkeratomeregistration surface 28 of the blade handle 24 engages the cutting toolregistration surface 14 of the head assembly 10 of the microkeratome 4.Because the position of the cutting edge 80 is registered relative tothe microkeratome registration surface 28 of the blade handle 24, andbecause the position of the microkeratome registration surface 28 of theblade handle 24 is registered relative to the cutting tool registrationsurface 14 of the head assembly 10 of the microkeratome 4, the positionof the cutting edge 80 of the blade 56 is likewise registered relativeto this cutting tool registration surface 14. Enhancing the accuracy ofthe positioning of the cutting edge 80 for a LASIK procedure is ofcourse very desirable.

[0068] Additional views of the cutting blade 56 are presented in FIGS.2A-B and 3A. The cutting blade 56 includes a top wall or surface 60 anda bottom wall or surface 64. A pair of side walls or surfaces 68 of thecutting blade 56 are laterally spaced from a central, longitudinalreference axis 58 associated with the cutting blade 56. Herein, the term“laterally” spaced, extending, or the like means being at leastgenerally in or along a direction that is perpendicular to the central,longitudinal reference axis 58 of the blade 56. Longitudinally spacedfrom the cutting edge 80 of the cutting blade 56 is a rear wall orsurface 106. Herein, the term “longitudinally” spaced, extending, or thelike means being at least generally in or along a direction that iscollinear with or parallel to the central, longitudinal reference axis58 of the blade 56. Both the side surfaces 68 and the rear surface 106extend between and interconnect the top surface 60 and bottom surface 64of the blade 56. The distance between the top surface 60 and the bottomsurface 64 thereby defines a thickness of the cutting blade 56. In oneembodiment, the thickness of the cutting blade 56 is within a range ofabout 230 microns to about 250 microns.

[0069] The rear surface 106 of the blade 56 includes a notch or recess110 that is centrally disposed relative to the central, longitudinalreference access 58. In this regard, the rear surface 106 includes whatmay be characterized as a pair of first sections 112, a second section114 that is longitudinally spaced from the first section 112 in thedirection of the cutting edge 80, and a pair of laterally spaced thirdsections 116 that interconnect the second section 114 with one of thefirst sections 112. Generally, the configuration of the rear surface 106facilitates the removal of the cutting blade 56 from a wafer from whicha plurality of cutting blades 56 may be fabricated in a batch process.This will be discussed in more detail below.

[0070] In the illustrated embodiment of the cutting blade 56: 1) eachside surface 68 includes a first section 69 that extends rearwardly fromthe cutting edge 80 perpendicularly thereto, as well as a second section70 that extends rearwardly from its corresponding first section 69 andat least generally toward the central, longitudinal reference axis 58;2) the pair of first sections 112 and the second section 114 associatedwith the notch 110 on the rear surface 106 are all parallel with thecutting edge 80; and 3) the pair of laterally spaced (relative to thecentral, longitudinal reference axis 58) third sections 116 associatedwith the notch 110 are parallel with the central, longitudinal referenceaxis 58. Other configurations for the cutting blade 56 may beappropriate depending upon the application, as well as otherconfiguration/orientations for the various parts thereof unlessotherwise noted herein as being required.

[0071] A planar first cutting edge surface 72 is disposed at an anglerelative to the top surface 60 of the blade 56 and intersects with thistop surface 60 at an upper edge 76. The first cutting edge surface 72extends between this upper edge 76 and the cutting edge 80 of thecutting blade 56. In the illustrated embodiment, the first cutting edgesurface 72 also intersects with the bottom surface 64 of the cuttingblade 56. As such, that portion of the bottom surface 64 of the cuttingblade 56 that is adjacent to the cutting edge 80 and intersects with thefirst cutting edge surface 72 may be characterized as a second cuttingedge surface 66 for the cutting blade 56. The first cutting edge surface72 is disposed at an angle θ (FIG. 3A) relative to the second cuttingedge surface 66, and this may be characterized as the blade angle θ. Anyappropriate blade angle θ may be utilized by the cutting blade 56 andwhich may depend upon the application in which the blade 56 is to beused. In one embodiment for the case of biological applications (e.g.,cutting tissue, such as a human eye), the blade angle θ is preferablywithin a range of about 15° to about 25°.

[0072] Other options exist for defining the cutting edge 80 and theblade angle θ of the cutting blade 56. One example is presented in FIG.3B where the cutting edge 80′ is defined by a second cutting edgesurface 66′ that is disposed at an angle relative to the bottom surface64 of the blade 56′ and that intersects with the first cutting edgesurface 72′. This of course disposes the cutting edge 80′ at what may becharacterized as an “intermediate elevation” between the elevation ofthe top surface 60 and the elevation of the bottom surface 64 of thecutting blade 56′.

[0073] Features are incorporated into the structure of the cutting blade56 for purposes of registering or aligning the cutting edge 80 to aparticular position when installed on the microkeratome 4. These samefeatures are incorporated in each cutting blade 56 so that the cuttingedge 80 of each cutting tool 20 that is installed in the microkeratome 4is registered or aligned to the same position, preferably within atolerance of 25 microns. That is, the variance of the position of thecutting edge 80 relative to the desired position is no more than about25 microns in any dimension for each cutting tool 20 that may beinstalled in the microkeratome 4. This variation principally relates tothe geometry of the blade handle 24 and the adhesion of the blade handle24 to the cutting blade 56.

[0074] The cutting blade 56 includes a pair of registration cavities 84that interface or cooperate with the blade handle 24 in a manner so asto register or align the cutting edge 80 to the desired position wheninstalled in the microkeratome 4. Any appropriate number of registrationcavities 84 may be utilized and disposed in any appropriate position onthe cutting blade 56. However, utilizing a pair of registration cavities84 in the position of the illustrated embodiment provides a number ofadvantages, including facilitating parallel orientation of the bladehandle 24 relative to the cutting edge 80 of the blade 56.

[0075] Both registration cavities 84 of the cutting blade 56 areidentical. Only one registration cavity 84 then need be describedherein. The registration cavity 84 extends through the entire thicknessof the cutting blade 56 in the illustrated embodiment, although such maynot be required for all applications that may utilize the blade 56 orcutting tool 20. For instance, the registration cavity 84 could beformed on the top surface 60 of the blade 56 and extend down toward, butnot to, the bottom surface 64. However, preferably the “bottom” of theregistration cavity 84 (more specifically a lower edge 102 of aregistration wall or surface 94 associated with the registration cavity84) and the cutting edge 80 are disposed at the same elevation ordistance from the top surface 60 (measured perpendicularly to the topsurface 60). In any case, the registration cavity 84 may becharacterized as being at least generally concave or “upwardly open” inrelation to the top surface 60 of the cutting blade 56 (e.g., accessiblethrough the top surface 60 of the blade 56).

[0076] Each registration cavity 84 includes a front wall 92, a rear wallor registration surface 94 that is longitudinally spaced from the frontwall 92, and a pair of laterally spaced side walls 88 that extendbetween and interconnect the front wall 92 with the registration surface94. Generally, the front wall 92 and side walls 88 of the registrationcavity 84 may be of any appropriate shape/configuration/orientation, asit is the registration surface 94 that provides the desired registrationin relation to the cutting edge 80. How far the registration surface 94and the corresponding front wall 92 should be longitudinally spaced(represented by distance “S” in FIG. 8B) is at least by a distance thatwould allow the blade handle 24 to first be installed on the cuttingblade 56, and then moved parallel with the top surface 60 of the cuttingblade 56 to register or align the blade handle 24 relative to thecutting blade 56 using the registration surface(s) 94. The spacingbetween the side walls 88 of the registration cavities 84 may provide a“lateral” registration feature for the blade handle 24 relative to thecutting blade 56 as will be discussed in more detail below.

[0077] Registration or alignment of the cutting edge 80 relative to themicrokeratome registration surface 28 of the blade handle 24, andthereby relative to the cutting tool registration surface 14 of the headassembly 10 of the microkeratome 4, is provided in the case of thecutting blade 56 by having the registration surface 94 be a planarsurface that is parallel with the planar first cutting edge surface 72.That is, the registration surface 94 of each registration cavity 84utilized by the cutting blade 56 is a planar surface that extends froman upper edge 98 (at the intersection with the top surface 60 in theillustrated embodiment) to a lower edge 102 (at the intersection withthe bottom surface 64 in the illustrated embodiment) in the sameorientation that the planar first cutting edge surface 72 extends fromits upper edge 76 to the cutting edge 80. The lower edge 102 of eachregistration cavity 84 is parallel with the cutting edge 80. In theillustrated embodiment, the upper edge 76 of the first cutting edgesurface 72 and the upper edge 98 of each registration surface 94 aredisposed within a first reference plane that is parallel with a secondreference plane, that in turn contains the cutting edge 80 associatedwith the first cutting edge surface 72 and the lower edge 102 of eachregistration surface 94 (and parallel with the top surface 60 and bottomsurface 64 of the blade 56 for that matter). Moreover, the pair ofregistration surfaces 94 of the registration cavities 84 are disposedwithin a common reference plane. As such, the registration cavities 84are disposed equidistantly from the cutting edge 80, as are theircorresponding registration surfaces 94.

[0078] One preferable way to fabricate the cutting blade 56 is by usingan anisotropic etch, at least for purposes of defining the first cuttingedge surface 72 and the registration surface 94 of each registrationcavity 84. Preferably the entire cutting blade 56 is defined by a singleanisotropic etch. This allows the various structures to be veryprecisely positioned. For instance, the registration cavities 84 may bevery precisely positioned relative to the cutting edge 80. The maximumvariation in the location of the cutting edge 80 relative to the loweredge 102 of each registration cavity is about 6 microns. This variationmay be influenced by a number of factors. Referring to FIG. 2A, theupper edge 76 of the first cutting edge surface 72 and the upper edge 98of each registration cavity 84 are formed to within a tolerance of 1micron or better. This is due to the fact that they may be defined usingthe same photolithographic mask as will be discussed in more detailbelow in relation to FIGS. 9A-D and FIG. 10. FIGS. 9A-D and FIG. 10 arespecifically directed to the fabrication of the cutting blade 56. Anyvariation in the location of the first cutting edge surface 72 relativeto the registration surface 94 of each registration cavity 84 would bedue to errors in the position of one or more of the upper edge 76 of thefirst cutting edge surface 72 and the upper edge 98 of each registrationcavity 84, coupled with errors associated with the etch process.However, any variation in the location of the first cutting edge surface72 relative to the registration surface 94 of each registration cavity84 should be no more than about 2 microns. This in turn will theninfluence the location of the cutting edge 80 relative to the lower edge102 of each registration cavity 84, as will the geometry of the planesthat intersect to form the edges 80, 76, 98, and 102. Once again, themaximum variation between the location of the cutting edge 80 relativeto the lower edge 102 of each registration cavity 84 should be no morethan about 6 microns for a blade angle θ of 19 degrees that will bediscussed in more detail below (e.g., 2 microns, divided by the sine of19 degrees).

[0079] It should be appreciated that the structure of the blade 56 setforth herein is “idealized” in accordance with its corresponding blademask as noted above, and therefore that the resulting shape of thevarious components of the blade 56 may not conform exactly to theillustrations provided herein. For instance, FIGS. 2A-B illustrate theshape of the registration cavities 84 in accordance with the blade mask.The anisotropic etch may actually produce a profile that is illustratedin FIG. 2C, where a “single prime” designation again is used to identifyan alternative configuration for the registration cavity 84′ (along withits corresponding upper edge 98′, registration surface 94′, lower edge102′, side walls 88′, and front wall 92′).

[0080] There are a number of features of the cutting blade 56 thataccommodate or relate in at least some manner to using an anisotropicetch fabrication technique for the blade 56. One that is key in relationto the above-described registration feature is that the first cuttingedge surface 72 and the registration surface 94 of each registrationcavity 84 should be coplanar or parallel with a common crystal planethat the selected anisotropic etchant will etch to, but not through. Inone embodiment where the anisotropic etchant is KOH and where thecutting blade 56 is etched from single crystal silicon, the firstcutting edge surface 72 and the registration surface 94 of eachregistration cavity 84 are coplanar or parallel with a plane in the{111} family of planes (which includes both the positive and negativeintercepts). That is, a plane within the {111} family of planes ineffect is an etch stop for the anisotropic etch. Other crystal planescould be selected for the first cutting edge surface 72 and theregistration surface 94 of each registration cavity 84. However, anappropriate anisotropic etchant must of course be selected for thematerial being etched and the crystal plane that is to be used to definethe orientation of the first cutting edge surface 72 and theregistration surface 94 of each registration cavity 84 in the describedmanner.

[0081] Both the top surface 60 and the bottom surface 64 of the cuttingblade 56 should be planar surfaces, including for purposes ofaccommodating using an anisotropic etchant to define the first cuttingedge surface 72 and the registration surface 94 of each registrationcavity 84. Flexibility in relation to the definition of the cutting edge80, more specifically in relation to its associated blade angle θ (FIG.3A), may be realized by forming the top surface 60 and bottom surface 64of the cutting blade 56 in a certain manner. At least one Miller indexof the set of three Miller indices that define the top surface 60 andthe bottom surface 64 of the cutting blade 56 should have an absolutevalue greater than “3” and be within the family of planes defined by theset of three Miller indices {ABC}, where “A”, “B”, and “C” eachrepresent one Miller index, where at least one of the three indexes hasan absolute value greater than “3”, and where “A”, “B”, and “C” eachinclude both the positive and negative intercepts.

[0082] Each of the side surfaces 68 of the cutting blade 56, the frontwall 92 and pair of side walls 88 of each registration cavity 84, andthe rear surface 106 of the cutting blade 56 may be of any orientationrelative to the top surface 60 and bottom surface 64 of the blade 56. Inone embodiment and for the case where the cutting blade 56 is fabricatedfrom single crystal silicon: the front wall 92 of each registrationcavity 84 and the rear surface 106 of the cutting blade 56 are bothperpendicular to the top surface 60 and bottom surface 64 of the blade56, and further are coplanar with or parallel with a crystal plane inthe {111} family of planes (including both the positive and negativeintercepts); and the side surfaces 68 of the cutting blade 56 and theside walls 88 of each registration cavity 84 are not perpendicular tothe top surface 60 and bottom surface 64 of the blade 56, and are notnecessarily coplanar with a crystal plane in the {111} family of planes(including both the positive and negative intercepts).

[0083] Cooperation between the cutting blade 56 and the blade handle 24of the cutting tool 20 is at least one component of registering oraligning the cutting blade 56 in a desired position relative to apatient when installed in the microkeratome 4, more specifically itscutting edge 80. Various features of the blade handle 24 are presentedin FIGS. 4-7 for the case of the configuration of the head assembly 10utilized by the microkeratome 4 of FIG. 1. It should be appreciated thatother configurations for the blade handle 24 may be required fordifferent applications of the cutting blade 56, different types ofmicrokeratomes 4, or different head assemblies. Moreover, not allapplications of the cutting blade 56 will necessarily require an“intermediate” blade handle.

[0084] The blade handle 24 is attached or anchored to the cutting blade56 so that there is no substantial movement therebetween. Stated anotherway, the blade handle 24 and the cutting blade 56 function as a singleunit and move together during operation of the microkeratome 4. Anyappropriate way of maintaining the blade handle 24 in a fixed relativepositional relationship with the cutting blade 56 may be used, includingany appropriate adhesive (e.g., an epoxy; a UV curable epoxy; an epoxywith spacing spheres), or by deforming some portion of the handle 24 bymelting or heat-staking.

[0085] Features may be incorporated into the structure of the bladehandle 24 for interfacing with the head assembly 10 of the microkeratome4 or otherwise. The blade handle 24 includes a pair of laterally spacedguide rails 52 in the illustrated embodiment that are disposed along aportion of the side surfaces 68 of the cutting blade 56 (morespecifically the second sections 70) when the blade handle 24 is mountedon the cutting blade 56. In one embodiment, the surface 54 of each ofthe guide rail 52 that projects toward the corresponding portion of theside surface 68 of the cutting blade 56 is planar and disposed inparallel relation with the corresponding portion of the side surface 68of the cutting blade 56. Other profiles may be appropriate. There may bea space between at least a portion of this surface 54 of the guide rails52 and their corresponding side surface 68 when the blade handle 24 isregistered or aligned with the cutting blade 56.

[0086] Registration or alignment of the cutting edge 80 of the cuttingblade 56 in the desired position in the microkeratome 4 utilizes themicrokeratome registration surface 28 of the blade handle 24. Thismicrokeratome registration surface 28 again interfaces with the cuttingtool registration surface 14 on the head assembly 10 of themicrokeratome 4. Although the cutting tool registration surface 14 isdisposed on the “foreword” end of the blade handle 24, it may bedisposed in any appropriate position so as to cooperate with acorresponding registration surface on the head assembly 10 of themicrokeratome 4.

[0087] Multiple features of the blade handle 24 relate in at least somemanner to the accurate positioning of the cutting edge 80 of the cuttingblade 56 relative to the blade handle 24, more specifically itsmicrokeratome registration surface 28. One is a planar bottom surface 48of the blade handle 24 that interfaces with the planar top surface 60 ofthe cutting blade 56. This provides what may be characterized as a“vertical” registration feature between the blade handle 24 and cuttingblade 56. Both a lateral and a longitudinal or “fore/aft” registrationfeature between the blade handle 24 and the cutting blade 56 may beprovided by the blade handle 24 including at least one registrant 32.Each registrant 32 extends or projects at least generally downwardlyfrom the planar bottom surface 48 of the blade handle 24. A pair ofregistrants 32 are utilized by the blade handle 24 in the illustratedembodiment, one for each registration cavity 84 of the cutting blade 56.These registrants 32 are disposed along a common line that is parallelwith the cutting edge 80 of the blade 56 when the blade 56 is properlyregistered to the blade handle 24.

[0088] Each registrant 32 includes a peripheral wall 36 that intersectswith a bottom wall 40. Four side walls or surfaces 37 a-d (FIGS. 8A-B)define the peripheral wall 36 in the illustrated embodiment, with theside walls 37 a and 37 c being parallel with each other, and with theside walls 37 b and 37 d being parallel with each other. In theillustrated embodiment, the bottom wall 40 is rectangular. These fourside walls 37 a-d of the peripheral wall 36 of each registrant 32 aredisposed perpendicular to the bottom surface 48 of the blade handle 24in the illustrated embodiment. Lateral registration of the blade handle24 relative to the cutting blade 56 may be provided by the having theside walls 37 b and 37 d of each registrant 32 be spaced apart the samedistance as the side walls 88 of the corresponding registration cavity84 in which the registrant 32 is disposed. This will then dispose theside walls 37 b, 37 d of a given registrant 32 in interfacing or atleast closely spaced relation with the corresponding side wall 88 of thecorresponding registration cavity 84. Other configurations/orientationsof the peripheral wall 36 for each registrant 32 may be appropriate andprovide at least a degree of lateral registration. Longitudinalregistration of the blade handle 24 to the cutting blade 56 is providedby cooperation between each registrant 32 and its correspondingregistration surface 94, namely that which is associated with theregistration cavity 84 in which the registrant 32 is disposed.

[0089] Mounting the blade handle 24 on the cutting blade 56 maygenerally entail disposing an appropriate adhesive on at least one ofthe top surface 60 of the cutting blade 56 and the bottom surface 48 ofthe blade handle 24. A light curable epoxy is a particularly desirableway to attach the blade handle 24 to the cutting blade 56. Eachregistrant 32 on the bottom surface 48 of the blade handle 24 is thendisposed within its corresponding registration cavity 84 on the cuttingblade 56. Although only relative movement is required, in one embodimentthe blade handle 24 is advanced toward a stationary cutting blade 56. Inany case, preferably the registrants 32 are initially disposed withinthe corresponding registration cavity 84 so as to not contact its rearwall or registration surface 94. This may be utilized to seat the planarbottom surface 48 of the blade handle 24 on the planar top surface 60 ofthe cutting blade 56. The cutting blade 56 is now supporting the bladehandle 24 by itself. The blade handle 24 may then be moved relative tothe cutting blade 56 so as to increase the spacing between themicrokeratome registration surface 28 of the blade handle 24 and thecutting edge 80 of the cutting blade 56, or stated another way so as toincrease the spacing “S” between the registrant 32 of the blade handle24 and the front wall 92 of its corresponding registration cavity 84 onthe blade 56. Preferably, the bottom surface 48 of the blade handle 24is maintained in interfacing relation with the top surface 60 of thecutting blade 56 during this movement. Stated another way, the notedrelative movement between the blade handle 24 and cutting blade 56 is ina direction that is at least generally parallel with the top surface 60of the cutting blade 56 and the bottom surface 48 of the blade handle24. The blade handle 24 is moved relative to the cutting blade 56 inthis manner until each registrant 32 cooperates with its correspondingregistration surface 94, more typically a portion thereof. This thenregisters or aligns the cutting edge 80 of the cutting blade 56 relativeto the microkeratome registration surface 28 of the blade handle 24,which in turn registers or aligns the cutting edge 80 of the cuttingblade 56 in a desired position within the microkeratome 4. In oneembodiment, each registrant 32 is separated from its corresponding frontwall 92 by a distance of at least about 1 millimeter when the registrant32 is interfacing with its corresponding registration surface 94.

[0090] The blade handle 24 is fixed to the cutting blade 56 when in theabove-noted registered position. This emphasizes the desirability ofusing a light curable epoxy, including a UV curable epoxy. That is, alight curable epoxy allows the blade handle 24 to be mounted on theblade 56 in the above-noted manner so as to register the position of theblade handle 24 relative to the cutting blade 56 before the lightcurable epoxy sets. An appropriate light source (e.g., UV) may then bedirected at the light curable epoxy to cure the same (in less than 10seconds in the case of at least certain UV curable epoxies) and therebyfix the position of the blade holder 24 relative to the cutting blade56. Having the position of the cutting edge 80 of the blade 56registered relative to the microkeratome registration surface 28 of theblade handle 24 registers the position of the cutting edge 80 wheninstalled in the microkeratome 4. Once again, the microkeratomeregistration surface 28 of the blade handle 24 is registered or alignedrelative to the cutting tool registration surface 14 of the headassembly 10 of the microkeratome 4.

[0091] Any appropriate cooperation between a given registrant 32 of theblade handle 24 and its corresponding registration surface 94 of thecutting blade 56 may be utilized that provides the desired registrationor alignment of the cutting edge 80 of the cutting blade 56 relative tothe microkeratome registration surface 28 of the blade handle 24 in thelongitudinal or fore-aft dimension. In one embodiment, the contactbetween a registrant 32 and its corresponding registration surface 94 islimited to being at least generally along a line. Stated another way,the interface between a given registrant 32 and its correspondingregistration surface 94 is limited to a “line contact” in oneembodiment. This may be provided in any number of manners. Three optionsare illustrated in FIGS. 8B-D. FIG. 8B illustrates that the registrant32 actually extends below the bottom surface 64 of the cutting blade 56,such that the lower edge 102 of the registration surface 94 engages aportion of the peripheral wall 36 of the registrant 32, namely the sidewall 37 c. FIG. 8C illustrates that the lower edge 102 of theregistration surface 94 engages a registrant 32′ of the blade handle 24′at least generally at the intersection between the peripheral wall 36and the bottom wall 40 of the registrant 32. FIG. 8D illustrates thatthe intersection between the peripheral wall 36 and the bottom wall 40of the registrant 32 engages its corresponding registration surface 94somewhere between the lower edge 102 of the registration surface 94 andthe upper edge 98 of this registration surface 94. Preferably, theregistrant 32 interfaces with its corresponding registration surface 94closer to the lower edge 102 than its upper edge 98, and including atthe intersection between the bottom surface 64 of the blade 56 and thecorresponding registration surface 94.

[0092] Standard semiconductor processing techniques may be utilized tofabricate the cutting blade 56 of the cutting tool 20. One significantadvantage of using this technique is the accuracy with which the cuttingblade 56 may be fabricated, particularly the accuracy of the position ofthe cutting edge 80 relative to the position of the registration surface94 of each registration cavity 84 of the cutting blade 56. FIGS. 9A-Dillustrate a number of steps in one method by which the cutting blade 56may be fabricated using standard semiconductor processing techniques.Initially, a suitable material is selected for the fabrication of thecutting blade 56. Suitable materials for fabrication of the cuttingblade 56 using the process described herein include without limitationsingle crystal silicon, single crystal quartz, and potentially othersingle crystal material having suitable crystal-plane selectiveetchants. Those materials that are suitable for fabrication of thecutting blade 56 generally are those that may be etched so that the etchwill stop at a predetermined place/position within the material (e.g.,at a particular crystal plane within the same material, that in effectacts as an etch stop), and further where the same etch behavior existsregardless of the location of the opening in the mask being utilized forthe etch. Regarding the latter characterization, the material must besuch that a particular etchant will behave the same anywhere within thematerial that is to be etched. It is really the combination of thematerial and the selected etchant that allows the etchant toanisotropically etch the material in the desired manner to define thecutting blade 56.

[0093] The material from which the cutting blade 56 is fabricated inaccordance with FIGS. 9A-D generally may be characterized as a substrate130, and will more typically be in the form of a wafer 130. It should beappreciated that wafers that are “commonly available” for thefabrication of semiconductor devices (e.g., silicon wafers having topand bottom surfaces parallel with either the (110) and (100) crystalplanes) may not be suitable in relation to defining the desired bladeangle θ for one or more applications of the cutting blade 56. In anycase, masking layers 118, 126 are defined on an upper surface 134 and alower surface 138, respectively, of the wafer 130 using conventionalsemiconductor processing techniques. This is illustrated in FIG. 9A. Themasking layers 118, 126 may be formed on the corresponding surface 134,138 of the wafer 130 in any appropriate manner (e.g., chemical vapordeposition, physical vapor deposition, or thermal growth in the case ofsilicon dioxide on silicon). Any material that may be patterned for asubsequent selective etching of the wafer 130 may be utilized by themasking layers 118, 126 (e.g., silicon nitride, silicon oxide).

[0094] What may be characterized as a blade mask is transferred onto theupper masking layer 118 in a manner known in the art for purposes ofdefining the cutting blade 56 and as illustrated in FIGS. 9B-C. Multiplemasking layer openings or apertures 122 a-c are formed on the uppermasking layer 118 to define each cutting blade 56 that is to befabricated from the wafer 130. These masking layer apertures 122 a-cextend entirely through the upper masking layer 118 to expose desired,selective portions of the upper surface 134 of the wafer 130. Anyappropriate technique may be utilized for transferring the blade maskonto the upper masking layer 118, including, photomasking, masking,photolithography, microlithography, which is then followed by a suitabletechnique of etching the pattern into the upper masking layer 118 bymeans of wet chemical etching, plasma etching, reactive ion etching, orion beam milling. The creation of the hard mask can also be accomplishedusing a dual step process of using the photoresist to define the patterninto an intermediate layer of silicon dioxide. Once the photoresist isstripped, the silicon dioxide is then used as an etch mask layer todefine the silicon nitride by means of hot phosphoric acid.

[0095] The masking layer aperture 122 a is sized and configured todefine the first cutting edge surface 72 of the cutting blade 56 and theperimeter of the cutting blade 56 (the cutting edge 80, side surfaces68, and rear surface 106). Each masking layer aperture 122 b is“interiorly” disposed (inwardly of what will ultimately be the perimeterof the cutting blade 56) and is sized and configured to define aregistration cavity 84 for the cutting blade 56. A masking layeraperture 122 c is also formed through the upper masking layer 118 todefine a score or score line within the wafer 130 to facilitate theremoval of the cutting blade 56 from the wafer 130 after the blade 56has been fabricated by an anisotropic etch (identified by referencenumeral 132 in FIGS. 12 and 13A). This score need not, but may, passthrough the entire vertical extent of the wafer 130.

[0096] No portion of the lower surface 138 of the wafer 130 needs to bepatterned to fabricate the cutting blade 56 from the wafer 130. As such,no portion of the lower surface 138 needs to be exposed to an etchantfor the fabrication of the cutting blade 56. However, a masking layeropening or aperture would be formed in the lower masking layer 126 inorder to define the second cutting edge surface 66′ of the cutting blade56′ of FIG. 3B.

[0097] After the upper masking layer 118 (and lower masking layer 126 ifrequired by the desired cutting edge configuration) has been processedto define the desired configuration for the cutting blade 56 and thevarious individual surfaces thereof, the wafer 130 is exposed to asuitable etchant. One way to execute the desired etching operation is todispose the wafer 130 in an etchant bath. In any case, those portions ofthe upper surface 134 of the wafer 130 that are exposed to the etchantwill have material removed to define the configuration illustrated inFIG. 9D, which corresponds with the cutting blade 56. The etchantsimultaneously defines the first cutting edge surface 72 and theregistration surface 94 of each registration cavity 84 utilized by theblade 56, and also defines the perimeter of the cutting blade 56. Asmall portion of the cutting blade 56 remains attached to the wafer 130in the form of a blade support tab at this time (see FIG. 12 to bediscussed below, where this blade support tab is identified by referencenumeral 131). This blade support tab is disposed under the portion ofthe upper mask 118 identified by reference numeral 119 in FIG. 9C. Theetchant also etches are least partially through the wafer 130 throughthe mask aperture 122 c to define a score (see FIG. 12 to be discussedbelow, where this score is identified by reference numeral 132).Generally, the cutting blade 56 is thereafter separated from theremainder of the wafer 130 by fracturing or breaking the wafer 130 alongthis score.

[0098] As noted above, an anisotropic etchant is utilized to fabricatethe cutting blade 56. The anisotropic etchant simultaneously forms thefirst cutting edge surface 72 and the registration surface 94 of eachregistration cavity 84 as planar, parallel surfaces. This is done byselecting an anisotropic etchant that will in effect stop etching whenreaching a certain crystal plane that defines the desired orientationfor the first cutting edge surface 72 relative to the top surface 60 ofthe cutting blade 56. Generally, the material defining the wafer 130 andthe selected etchant must be such that the behavior of the etchant isthe same, regardless of the location of any mask aperture in the uppermasking layer 118 (or the lower masking layer 126 for that matter). Forthe case of the wafer 130 being single crystal silicon and the firstcutting edge surface 72 and the registration surface 94 of eachregistration cavity 84 being parallel with a {111} crystal plane, anappropriate anisotropic etchant for simultaneously defining the firstcutting edge surface 72 and each registration surface 94 is KOH. Thatis, the KOH etchant will etch to, but not through, the first (111)crystal plane that is disposed under the edge of the upper masking layer118 (corresponding with the upper edge 76 and the upper edge 98).

[0099] Fabricating the cutting blade 56 in the above-noted mannerprovides a number of advantages. Initially, the position of the cuttingedge 80 relative to the position of each registration surface 94 can bedone with a very high degree of accuracy due to the high degree ofaccuracy with which mask apertures can be formed in a mask in accordancewith the foregoing. Moreover, the first cutting edge surface 72 issimultaneously formed with the registration surface 94 of eachregistration cavity 84, and this is done so that the cutting edgesurface 72 and the registration surface 94 of each registration cavity84 are disposed in parallel relation to a high degree of accuracy. Asnoted above, the anisotropic etch will proceed to the same exact crystalplane when defining each of the first cutting edge surface 72 and theregistration surface 94 of each registration cavity 84. The etch willthen have the same effect on both the first cutting edge surface 76 andthe registration surface 94 of each registration cavity 84. Each ofthese factors contributes to being able to enhance the precision withwhich the cutting edge 80 of the blade 56 is disposed relative to aparticular structure.

[0100]FIG. 10 depicts one embodiment of a protocol 140 for fabricatingone or more cutting blades 56 from the wafer 130. This protocol 140utilizes the basic steps/results that are illustrated in FIGS. 9A-D.Step 142 of the protocol 140 is directed to forming a masking layer on awafer (e.g., wafer 130). In the illustrated embodiment, what is commonlyreferred to in the art as a “hard mask” will ultimately be formed fromthis particular masking layer. Silicon nitride is used for the maskinglayer by step 142, although other materials may be appropriate. Anyappropriate way of forming the silicon nitride masking layer on thewafer may be utilized by step 142.

[0101] A first photoresist layer is formed on the silicon nitridemasking layer in accordance with step 146 of the protocol 140. Either apositive-acting or negative-acting photoresist material may be used bystep 146. Any appropriate way of forming the first photoresist layer onthe silicon nitride masking layer may be utilized by step 146. What maybe characterized as an alignment slot mask is then transferred onto thefirst photoresist layer through execution of step 150. Generally, thisalignment slot mask is used to define certain structures on the wafer tothereafter align what may be characterized as a “blade mask” to thewafer in a certain manner, more specifically to align the blade mask toa certain crystal orientation associated with the wafer. This “blademask” is that which has a layout of masking layer openings extendingtherethrough such that selected portions of the wafer will be etched ina manner so as to simultaneously fabricate/define a plurality of cuttingblades 56.

[0102] Step 154 of the protocol 140 indicates that the first photoresistlayer is developed in accordance with the alignment slot mask to createa plurality of openings that extend completely through the firstphotoresist layer in a layout that will be discussed in more detailbelow in relation to FIG. 11. “Developing” the first photoresist layerincludes both exposing portions of the first photoresist layer to anappropriate type of light (either that portion of the first photoresistmaterial that is to be removed in the case of a positive-actingphotoresist material, or that portion of the first photoresist layerthat is to remain in the case of a negative-acting photoresistmaterial), and thereafter exposing the “light treated” first photoresistlayer to an appropriate developer to remove portions of the firstphotoresist layer in accordance with the alignment slot mask. Openingsin accordance with the desired/required layout are formed through theentire vertical extent of the first photoresist layer to expose theunderlying silicon nitride masking layer.

[0103] Appropriate openings are next etched through the entire verticalextent of the silicon nitride masking layer in accordance with step 158of the protocol 140. The layout of these openings is in accordance withthe openings in the first photoresist layer, and thereby in accordancewith the alignment slot mask. In one embodiment, a reactive ion etch isused to define the openings in the silicon nitride masking layer in thelayout required by the alignment slot mask. Other types of etches may beappropriate. In any case, this then exposes selected portions of theupper surface of the underlying wafer. The first photoresist layer isthen stripped (step 162) from the now patterned silicon nitride maskinglayer, and another etch is initiated to form alignment slots that extendwithin, but typically not through, the wafer. In one embodiment, theetch from step 166 of the protocol 140 is a KOH etch. Other etches maybe appropriate. The etch from step 166 reaches the wafer through theopenings in the silicon nitride masking layer associated with step 158of the protocol 140, and thereby in accordance with the alignment slotmask of step 150.

[0104] The alignment slots on the wafer formed in accordance with steps146-166 of the protocol 140 are analyzed to determine which alignmentslot(s) is suitably aligned with a particular crystal orientationassociated with the wafer. This is represented by step 170 of theprotocol 140 of FIG. 10. The alignment slot(s) that are aligned with aparticular crystal orientation associated with the wafer are thenidentified (step 174 of the protocol 140) for subsequent use inaligning/orienting the blade mask to the wafer.

[0105]FIG. 11 illustrates one way in which the alignment slots referredto by the protocol 140 of FIG. 10 may be formed on the wafer 130 toorient the blade mask relative to the wafer 130. The wafer 130 includesa flat 206 that is disposed at the 6:00 o'clock position. A referenceaxis 218 extends from the 3:00 o'clock position to the 9:00 o'clockposition, through a center 212 of the wafer 130. Generally, a pluralityof alignment slots 210 a-k are formed on one side of the wafer 130,while a plurality of alignment slots 214 a-k are formed on an oppositeside of the wafer 130. Any number of alignment slots 210 a-k, 214 a-kmay be utilized. The alignment slot 210 a corresponds with the alignmentslot 214 a, the alignment slot 210 b corresponds with the alignment slot214 b, and so forth. Corresponding alignment slots 210 a-k/214 a-k aredisposed along a common axis that extends through the center 212 of thewafer 130. That is, the alignment slots 210 a, 214 a are positionedalong a common axis that extends through the center 212 of the wafer130, the alignment slots 210 b, 214 b are positioned along a common axisthat extends through the center 212 of the wafer 130, and so forth. Theaxes along which corresponding slots 210 a-k, 214 a-k are disposed arepreferably equally spaced about the center 212 of the wafer 130. Thatis, the axis along which the alignment slots 210 b, 214 b are disposedis rotated counterclockwise a predetermined amount from the axis alongwhich the slots 210 a, 214 a are disposed, the axis along which thealignment slots 210 c, 214 c are disposed is rotated counterclockwisethis same predetermined amount from the axis along which the slots 210b, 212 b are disposed, and so forth.

[0106] The alignment slots 210 a-k, the alignment slots 214 a-k, or bothmay be analyzed to identify which corresponding pair of alignment slots(e.g., (210 a, 214 a); (210 b, 214 b); (210 c; 214 c), etc) may be usedto align the blade mask to the wafer 130 for purposes of step 182 of theprotocol 140 of FIG. 10. This analysis may be done in any appropriatemanner, including optically. This analysis is undertaken pursuant tostep 170 of the protocol 140 of FIG. 10 that was discussed above.Generally, the alignment slot 210 a-k that is narrowest or of thesmallest width (“width” being the dimension that is perpendicular to itslength dimension, which is along a radius extending from the center 212of the wafer 130) is that which is most closely aligned with apredetermined crystal plane of the wafer. The same is true for thealignment slots 214 a-k.

[0107] Once a corresponding pair of alignment slots 210, 214 has beenidentified as being suitably aligned with a predetermined crystal planeof the wafer (if one alignment slot 210 is identified, its correspondingalignment slot 214 will also be of the narrowest width from the group ofalignment slots 214 a-k, and vice versa), this pair of alignment slots210, 214 is “selected” as noted by step 174 of the protocol 140 of FIG.10. That is, the location of this particular pair of alignment slots210, 214 is noted such that alignment marks on the blade mask may bealigned thereto in accordance with step 182 of the protocol 140. Morespecifically, a second photoresist layer is formed on the siliconnitride masking layer in accordance with step 178 of the protocol 140and in any appropriate manner. Either a positive-acting ornegative-acting photoresist again began may be utilized. In any case,the blade mask is aligned with the selected alignment slots inaccordance with step 182 of the protocol 140, and the blade mask isthereafter transferred onto the second photoresist layer in accordancewith step 186. The blade mask is such that the alignment slots 21 0 a-k,214 a-k will not interfere with the fabrication of the individualcutting blades 56 (e.g., the alignment slots 210 a-k, 214 a-k aredisposed beyond the region of the wafer on which cutting blades 56 arefabricated).

[0108] Step 190 of the protocol 140 indicates that the secondphotoresist layer is developed in accordance with the blade mask tocreate openings that extend completely through the second photoresistlayer. “Developing” the second photoresist layer includes both exposingportions of the second photoresist layer to an appropriate type of light(either that portion of the second photoresist material that is to beremoved in the case of a positive-acting photoresist material, or thatportion of the second photoresist layer that is to remain in the case ofa negative-acting photoresist material), and thereafter exposing the“light treated” second photoresist layer to an appropriate developer toremove the desired portions of the second photoresist layer. Openings inaccordance with the desired/required layout are formed through theentire vertical extent of the second photoresist layer to expose theunderlying silicon nitride masking layer.

[0109] Appropriate openings in accordance with the blade pattern arenext etched through the entire vertical extent of the silicon nitridemasking layer pursuant to step 194 of the protocol 140. The layout ofthese openings is in accordance with the openings in the secondphotoresist layer, and thereby in accordance with the blade mask. In oneembodiment, a reactive ion etch is used to define these openings in thesilicon nitride masking layer required by the blade mask. Other types ofetches may be appropriate. In any case, this then exposes selectedportions of the upper surface of the underlying wafer. The secondphotoresist layer is then stripped (step 198) from the now patternedsilicon nitride masking layer, and another etch is initiated throughstep 202 of the protocol 140. This particular etch defines the variousblades 56 that are included in the blade mask associated with step 186of the protocol 140, and the result of which corresponds with FIG. 9D.In one embodiment, the etch of step 202 is a KOH etch. Other etches maybe appropriate.

[0110] Any number of blades 56 may be simultaneously fabricated inaccordance with the protocol 140 of FIG. 10, depending of course on thesize of the blades 56 and the size of the wafer 130 from which theblades 56 are fabricated. One blade pattern that may be utilized by theprotocol 140 results in the layout illustrated in FIG. 12. Here, anumber of rows and columns of blades 56 have been fabricated on thewafer 130 utilizing the protocol 140 of FIG. 10. Each blade 56 remainsattached to the wafer 130 by at least one blade support tab 131 of thewafer 130 at this point in time (more than one blade support tab 131could be provided for each blade 56, and the blade support tab(s) 131for a particular blade 56 may be disposed at any appropriate locationalong the perimeter of the corresponding blade 56). This is the only“interconnection” between each blade 56 and the wafer 130 at this time,and which is the result of the etch of step 202 of the protocol 140. Allportions of the wafer 130 other than the blades 56 and theircorresponding blade support tabs 131 may be characterized as a frame orskeleton 128 of the wafer 130 (e.g., a remainder). As such, a blade 56may be characterized as being attached to its blade support tab 131,that in turn is attached to the frame 128.

[0111] Referring now to FIGS. 12 and 13A-B and as previously noted, ascore 132 is formed on each blade support tab 131 to facilitate theremoval of the corresponding blade 56 from the remainder of the wafer130 in a manner that will be discussed in more detail below. Anyappropriate number of scores 132 could be used in relation to each bladesupport tab 131. Each score 132 may, but preferably does not, extendthrough the entire vertical extent of the wafer 130. In one embodiment,the depth of each score 132 is within a range of about 2% to about 75%of the thickness of the wafer 130. In another embodiment, the depth ofeach score 132 is on the order of about 10-30 microns, where thethickness of the wafer 130 is about 240 microns.

[0112] A pair of planar score surfaces 133 a, 133 b intersect at alocation identified by reference numeral 133 c in FIG. 13B (hereafter“intersection 133”) to define the corresponding score 132 in theillustrated embodiment (e.g., a V-shaped configuration). The planarscore surfaces 133 a, 133 b may each be disposed in any appropriateangular orientation. In the illustrated embodiment, the planar scoresurface 133 a is parallel with the cutting edge surface 72, while theplanar score surface 133 b is perpendicular to the top surface 60 andbottom surface 64 of the blade 56. Other configurations may beappropriate for the score 132 and yet still facilitate separation of thecutting blade 56 from the wafer 130 in a desired manner.

[0113] It should be noted that the score 132 associated with each blade56 preferably does not extend across the entire lateral extent of itscorresponding blade support tab 131. That is, each score 132 preferablydoes not extend up to and intersect with that portion of the secondsection 114 of the notch 110 that is defined by the etch associated withstep 202 of the fabrication protocol 140 of FIG. 10. One benefit of thispreferred configuration is that it enhances the structural integrity ofthe blade support tabs 131. Stated another way, having each score 132extend all the way across its corresponding blade support tab 131 couldpossibly weaken the interconnection between the blade support tab 131and its corresponding blade 56. That is, in a situation where the score132 did extend across the entire lateral extent of the blade support tab131 (not shown), the etch associated with step 202 of the fabricationprotocol 140 of FIG. 10 may further reduce the lateral extent of thatend of the blade support tab 131 that interfaces with its correspondingblade 56. This could weaken the “joint” between the blade support tab131 and its corresponding blade 56 to the point of being susceptible topremature separation of the corresponding cutting blade 56 from theremainder of the wafer 130. The depth of the score 132 may also ofcourse have an effect on the structural integrity of the blade supporttab 131, or stated another way on the ability for the blade 56 to remainattached to the wafer 130, including while mounting a blade handle 24thereon. In one embodiment, a portion of the blade support tab 131 isdisposed beyond each end of the score 132 such that the score 132 doesnot extend across the entire width or lateral extent of the bladesupport tab 131, and the score 132 is about 2%-5% of the thickness ofthe blade 56. This provides sufficient structural integrity for theblade 56 to remain attached to the wafer 130 during handling and whilemounting the handle 24 on the blade 56, and yet still facilitatesseparation of the blade 56 from the wafer 130 at least substantiallyalong the score 132 at the desired time.

[0114] The configuration of the blade support tab 131, the location ofthe score 132 along the blade support tab 131, or both also may have aninfluence on how the fracture occurs. In one embodiment, the score 132is disposed along the length dimension of the blade support tab 131 at alocation where the blade support tab 131 is of its minimum width (e.g.,so that the shape of the blade support tab 131 acts as a stressconcentrator, to cause the greatest stress to occur at the location ofits corresponding score(s) 132 to further facilitate the fracture). Theblade support tab 131 may be shaped to generate the greatest stress atthe location of the corresponding score(s) 132 to further facilitate thefracture.

[0115] There are a number of other characteristics of note in relationto the scores 132. Initially, each score 132 is preferably aligned witha crystallographic plane such that the separation of the blades 56occurs at least substantially along a crystallographic plane, and in oneembodiment the intersection 133 c of the planar score surfaces 133 a,133 b of a given score 132 is aligned with a crystallographic plane.Moreover, preferably each score 132 is parallel with its correspondingcutting edge 80. Another is that the scores 132 are longitudinallyoffset from their corresponding first sections 112 of the rear surface106 of the corresponding blade 56. That is, the scores 132 are“longitudinally recessed” relative to the rear edge of the correspondingcutting blade 56. Other configurations of the rear surface 106 of theblade 56 may be utilized and still provide this “longitudinallyrecessed” feature. That is, what is of importance is that the score 132be positioned at a location that is longitudinally recessed from a mostrearwardly disposed portion of the rear surface 106 of the blade 56.Stated another way, the score 132 is preferably disposed closer to thecutting edge 80 than the most rearwardly disposed portion of the rearsurface 106 of the blade 56 (both measured along/parallel to thecentral, longitudinal reference axis 58 associated with the blade 56).This may be of benefit if one or more sharp edges develops during theseparation of the blade 56 from the wafer 130 at least generally alongits corresponding score 132.

[0116] Separation of the cutting blade 56 from the remainder of thewafer 130 utilizing the score 132 produces the configuration that isillustrated in FIG. 13C. Locations A and B correspond with the locationswhere the blade support tab 131 had previously merged with the cuttingblade 56. It can be seen that the planar score surface 133 b of thescore 132 has become part of the cutting blade 56. This also illustratesthe preferred approach where the score 132 and the portion of the secondsection 114 of the notch 110 on the opposite sides thereof are bothdefined by an etch, and thereby are similarly shaded. In contrast, theregion that is bounded by the pair of dashed lines, and further thatdoes not include planar score surface 133 b, is defined by fracturingthe wafer 130. Reference numeral 133 d identifies this fracture regionand utilizes a different shading than the surfaces defining the planarscore surface 133 b and the second section 114. The fracture region 133d is longitudinally spaced from the rear-most portion of the cuttingblade 56. In one embodiment, the fracture region 133 d is coplanar withthe second section 114, and may be considered as part thereof. Inanother embodiment, the fracture region 133 d is parallel to, butlongitudinally offset from, the second section 114 of the blade 56 (notillustrated). In this latter instance, the fracture regions 133 ddesirably still does not define the most rearwardly disposed portion ofthe cutting blade 56.

[0117] As noted above, there may be some variation between the blademask and the resulting configuration of the blade 56 when etched fromthe wafer 130. For instance, FIG. 13D includes a reference numeral 57 athat represents the blade mask perimeter profile for the blade 56. Theentire blade mask perimeter profile 57 a for a blade 56 is illustratedin FIG. 13D, as well as a portion of its corresponding blade support tab131. Reference numeral 57 b in FIG. 13D represents an actual perimeterprofile of a blade 56 when fabricated from the wafer 130 by ananisotropic etch. That is, the actual perimeter profile 57 b is thatwhich is actually achieved when using an anisotropic etch from a blademask have the blade mask perimeter profile 57 a. Only a portion of theactual perimeter profile 57 b is illustrated in FIG. 13D forconvenience.

[0118] Blades 56 are separated from the remainder of the wafer 130generally by first mounting a blade handle 24 on an individual cuttingblade 56 in the above-noted manner so as to properly register the bladehandle 24 to the cutting blade 56. Once the adhesive has cured anappropriate amount or once the blade handle 24 is otherwise sufficientlyfixed to an individual blade 56, the blade handle 24 is moved (e.g.,manually) relative to the wafer 130 so as to cause the wafer 130 tofracture along its corresponding score 132. In the illustratedembodiment, blade handles 24 are attached to each of the individualblades 56 on a wafer 130 while in a blade handle mounting fixture 224(FIGS. 14-19). The wafer 130 with the blade handles 24 mounted on itsvarious blades 54 is then transferred to a blade separation fixture 300where the individual blades 56, with a blade handle 24 mounted thereon,are separated from the remainder of the wafer 130 (FIGS. 20-23).

[0119]FIGS. 14-19 illustrate a desirable configuration for allowingblade handles 24 to be mounted on individual cutting blades 56 whilestill attached to and thereby part of the wafer 130. A base plate 220 isappropriately attached to a bottom surface 278 of a blade handlemounting fixture 224. One or more appropriate fasteners (not shown) aredirected through mounting holes 222 in the base plate 220 and intomounting holes 296 formed on the bottom surface 278 of the blade handlemounting fixture 224. Any appropriate way of interconnecting the baseplate 220 with the blade handle mounting fixture 224 may be utilized.

[0120] The base plate 220 generally cooperates with the blade handlemounting fixture 224 to define a vacuum chamber 284 (FIG. 17). Morespecifically, an annular groove 288 is defined on the bottom surface 278of the blade handle mounting fixture 224. An annular seal ring 292 isdisposed within this annular groove 288 and seats against an annularportion of a inner surface 223 of the base plate 220 that projectstoward or faces the bottom surface 278 of the blade handle mountingfixture 224. The perimeter of the vacuum chamber 284 thereby correspondswith the annular seal ring 292, while the top and bottom of the vacuumchamber 284 are defined by the bottom surface 278 of the blade handlemounting fixture 224 and the inner surface 223 of the base plate 220,respectively.

[0121] A vacuum is generated within the noted vacuum chamber 284 byfluidly interconnecting a vacuum pump or the like (not shown) to avacuum pull-down port 276 associated with the blade handle mountingfixture 224. This vacuum pull-down port 276 extends within the body ofthe fixture 224 and intersects with a vacuum linking port 280. Thisvacuum linking port 280 is disposed inwardly of the annular seal ring292 and intersects with the bottom surface 278 of the fixture 224 so asto be fluidly interconnected with the vacuum chamber 284. A plurality ofvacuum holes 268 are also disposed inwardly of the annular seal ring 292so as to interface with the vacuum chamber 284. These vacuum holes 268extend from the bottom surface 278 of the blade handle mounting fixture224 to an upper surface 228 of the fixture 224 on which the wafer 130 isdisposed.

[0122] The upper surface 228 of the blade handle mounting fixture 224 isconfigured to suitably support the wafer 130 and maintain the same in afixed position while installing the blade handles 24 on the individualblades 56 when still part of the wafer 130. Generally, less than theentirety of the lower surface 138 of the wafer 130 is in actual contactwith the upper surface 228 of the fixture 224. Moreover, the uppersurface 228 of the fixture 224 is configured so as to reduce thepotential for damage to the cutting edge 80 of each blade 56 whilemounting the blade handles 24 on the individual blades 56 the wafer 130.The upper surface 228 of the fixture 224 is also configured so as toallow the bottom surface 48 of each blade handle 24 to properly seat onthe top surface 60 of its corresponding blade 56 (e.g., so as to be ininterfacing relation, or at least in closely spaced and parallelrelation). When adhesives are used, there will of course be a bond linebetween the blade handle 24 and the blade 56. Finally, the blade 56itself is directly supported by the fixture 224 (in one embodiment incoplanar relation with non-blade portions of the wafer 130 and includingat least part of the above-noted frame 128), preferably in a manner suchthat the net moment about the corresponding score 132 is zero (i.e., notorque) when mounting a blade handle 24 on the cutting blade 56.

[0123] The upper surface 228 of the blade handle mounting fixture 224includes a recess 232 having a base 236 that is vertically offset froman annular perimeter portion 230 of the upper surface 228. This base 236includes a planar wafer supporting surface 238, a plurality of cuttingedge cavities 244, and a plurality of registrant cavities 256. Anannular side wall 240 of the recess 232 extends from the lower elevationwafer supporting surface 238 of the base 236 of the recess 232 to thehigher elevation annular perimeter portion 230 of the upper surface 228of the fixture 224. This annular side wall 240 at least substantiallyapproximates a perimeter of the wafer 130. Preferably, the annular sidewall 240 and the perimeter of the wafer 130 are disposed in closelyspaced relation (e.g., such that there is no more than about a 1millimeter gap between any portion of the annular side wall 240 and acorresponding portion of the perimeter of the wafer 130).

[0124] At least one notch 272 is formed on the upper surface 228 of theblade handle mounting fixture 224. Each notch 272 has a base 274 that isvertically offset from the wafer supporting surface 238 of the base 236of the recess 232. The base 274 of each notch 272 is disposed at a lowerelevation than the wafer supporting surface 238 of the base 236 of therecess 232. There is thereby a space between the wafer 130 and the base274 of each notch 272. This space facilitates installation of the wafer130 within the recess 232 of the blade handle mounting fixture 224, aswell as the removal of the wafer 130 from the blade handle mountingfixture 224. Both manual (e.g., human operator) and a machine(s) arecontemplated for one or both of the installation and removal of thewafer 130 relative to the blade handle mounting fixture 224.

[0125] Multiple features are incorporated in the configuration of thebase 236 of the recess 232 that is formed on the upper surface 228 ofthe blade handle mounting fixture 224 for receipt of the wafer 130. Oneis that the various vacuum holes 268 intersect with the base 236 of therecess 232. Preferably these vacuum holes 268 intersect with the wafersupporting surface 238 of the base 236 of the recess 232 (FIG. 16). Thewafer supporting surface 238 interfaces with the lower surface 138 ofthe wafer 130 to vertically support the wafer 130 while on the fixture224. When the wafer 130 is disposed within the recess 232, a vacuum ispulled through the various vacuum holes 268 against the overlying wafer130, through the vacuum chamber 284, through the vacuum linking port280, and through the vacuum pull-down port 276 by an appropriate source.Suction forces thereby retain the lower surface 138 of the wafer 130against the planar wafer supporting surface 238 of the base 236 of therecess 232. Exactly how the suction or vacuum force is generated andtransferred to the wafer 130 to retain the same against the fixture 224is not of particular importance. Other configurations may be utilized togenerate this type of retention force for the wafer 130 on the fixture224.

[0126] Another feature of the base 236 of the recess 232 formed on theupper surface 228 of the blade handle mounting fixture 224 is that itincludes multiple cutting edge cavities 244. Each cutting edge cavity244 is defined by a base 248 that is vertically spaced from the wafersupporting surface 238, and a side wall 252 that extends from the lowerelevation base 248 to the higher elevation wafer supporting surface 238(e.g., FIG. 18). In the illustrated embodiment, at least part of theside wall 252 of each cutting edge cavity 244 is disposed inperpendicular relation to the adjacent portion of the wafer supportingsurface 238 of the base 236 of the recess 232. Any appropriateorientation of the side wall 252 of the various cutting edge cavities244 may be utilized.

[0127] What is of principal importance in relation to each cutting edgecavity 244 is that they be sized and oriented on the upper surface 228of the fixture 224 such that the cutting edge 80 of each blade 56 willbe disposed over one of the cutting edge cavities 244 when the wafer 130is disposed within the recess 232 of the fixture 224. That is, thecutting edge 80 of each blade 56 is disposed in vertically spacedrelation to the blade handle mounting fixture 224. Preferably, thecutting edge 80 of each blade 56 never contacts the fixture 224 whilethe wafer 130 is positioned thereon. In the illustrated embodiment, agiven cutting edge cavity 244 accommodates the cutting edge 80 formultiple blades 56. More specifically, a plurality of the cutting edgecavities 244 are disposed in equally spaced rows along the base 236 ofthe recess 232. A given cutting edge cavity 244 accommodates all of theblades 56 in a corresponding row on the wafer 130 (i.e., provides aspace below the cutting edge 80 of each blade 56 in a given row on thewafer 130) in the illustrated embodiment. It should be appreciated thatthe base 236 of the recess 232 could be configured such that the cuttingedge 80 of each individual blade 56 has its own individual cutting edgecavity 244 (not shown).

[0128] Multiple registrant cavities 256 are also formed on the base 236of the recess 232 of the blade handle mounting fixture 224. Generally,these registrant cavities 256 are sized so that the registrants 32 onthe bottom surface 48 of the blade handle 24 do not contact the fixture224 while mounting a blade handle 24 on a particular cutting blade 56.Each registrant cavity 256 is defined by a base 260 that is verticallyspaced from wafer supporting surface 238, and a side wall 264 thatextends from the lower elevation base 260 to the higher elevation wafersupporting surface 238 (e.g., FIG. 18). In the illustrated embodiment,at least part of the side wall 264 of each registrant cavity 256 isdisposed in perpendicular relation to the adjacent portion of the wafersupporting surface 238 of the base 236 of the recess 232. Anyappropriate orientation of the side wall 264 of the various registrantcavities 256 may be utilized.

[0129] What is of principal importance in relation to each registrantcavity 256 is that they be sized and oriented on the upper surface 228of the blade handle mounting fixture 224, such that each registration 84of each blade 56 will be disposed over one of the registrant cavities256 when the wafer 130 is disposed within the recess 232 on the fixture224. More specifically, each registrant cavity 256 should be sized andoriented on the upper surface 228 of the fixture 224 such that aregistrant cavity 256 is disposed below each registrant 32 of each bladehandle 24 to keep the bottom wall 40 of each registrant 32 of each bladehandle 24 in vertically spaced relation to the blade handle mountingfixture 224. In the illustrated embodiment, some registrant cavities 256(those on an end of a row of registrant cavities 256) accommodate asingle registrant 32 from a single blade handle 24, while otherregistrant cavities 256 accommodate a registrant 32 from a pair of bladehandles 24 mounted on adjacently disposed blades 56 within a given rowon the wafer 130. Although a plurality of rows of registrant cavities256 could be utilized and spaced such that a given single registrantcavity 256 accommodated the registrant 32 of each blade handle 24mounted on all of the blades 56 within a given row on the wafer 130 (notshown), the illustrated configuration is advantageous in relation to howthe wafer 130 is supported by the fixture 224 for installation of theblade handles 24.

[0130] Appropriate support of the wafer 130 is provided by theillustrated configuration of the blade handle mounting fixture 224 wheninstalling the blade handles 24 on the individual blades 56 that arestill attached to and part of the wafer 130. Portions of the wafersupporting surface 238 that are disposed under, interface with, andsupport the representative blade 56 illustrated in FIG. 19, are shown bythe dashed lines in FIG. 19. In this regard, each blade 56 of the wafer130 is supported by the blade supporting surface 238 of the fixture 224across the entire width of the blade 56 over a region that is spacedback from its cutting edge 80, which again is disposed over one of thecutting edge cavities 244 so as to be spaced from the fixture 224. Eachblade 56 is also supported by the blade supporting surface 238 of thefixture 224 across the entire width of the blade 56 at or toward therear of the blade 56 (e.g., proximate the rear surface 106). Finally,the blade 56 is also supported by the blade supporting surface 238 ofthe fixture 224 under its corresponding blade support tab 131 and alonga longitudinally extending region between the registrant cavities 84.Therefore, the blades 56 do not tend to deflect downwardly a significantdegree when installing blade handles 24 on the blades 56 at a time whenthese blades 56 are still attached to and part of the wafer 130. Asnoted above, preferably the blade 56 itself is directly supported by thefixture 224 (in one embodiment in coplanar relation with non-bladeportions of the wafer 130), in a manner such that the net moment aboutthe corresponding score 132 is zero (i.e., no torque) when mounting ablade handle 24 on the cutting blade 56.

[0131] Summarizing the manner in which blade handles 24 are mounted onthe blades 56, the wafer 130 with the blades 56 formed thereon isdisposed within the recess 232 of the blade handle mounting fixture 224in the manner illustrated in FIG. 14. A vacuum is drawn so as to retainportions of the wafer 130 against the wafer supporting surface 238associated with the fixture 224. An appropriate adhesive may be appliedon at least one of the top surface 60 of one or more of the cuttingblades 56 and the bottom surface 48 of a corresponding number of bladehandles 24. Each registrant 32 on the bottom surface 48 of a particularblade handle 24 is then disposed within a corresponding registrationcavity 84 on a particular blade 56 by moving the blade handle 24 towardthe fixture 224. Preferably, the registrants 32 of this blade handle 24are initially disposed within the corresponding registration cavity 84of the particular blade 24 so as to not contact its rear wall orregistration surface 94. This may be utilized to seat the planar bottomsurface 48 of the blade handle 24 on the planar top surface 60 of thecutting blade 56. The blade handle 24 may then be moved generallyrearwardly until each registrant 32 cooperates with its correspondingregistration surface 94, more typically a portion thereof. This thenregisters or aligns the cutting edge 80 of the particular cutting blade56 relative to the microkeratome registration surface 28 of itscorresponding blade handle 24, which in turn registers or aligns thecutting edge 80 of the cutting blade 56 in a desired position within themicrokeratome 4. Once again, the microkeratome registration 28 of theblade handle 24 is registered or aligned relative to the cutting toolregistration surface 14 of the head assembly 10 of the microkeratome 4.

[0132] Multiple cutting blades 56 may be formed on the wafer 130 priorto being positioned on the blade handle mounting fixture 224. A bladehandle 24 may be mounted on each cutting blade 56 in the above-describedmanner. Blade handles 24 may be sequentially mounted on the variousindividual cutting blades 56, multiple blade handles 24 may besimultaneously mounted on multiple cutting blades 56, or blade handles24 may be simultaneously mounted on all cutting blades 56 formed on thewafer 130. Regardless of how many cutting blades 56 are formed on thewafer 130 and the sequence of installing any blade handle(s) 24 thereon,the wafer 130 may be removed from the fixture 224 with a blade handle 24being mounted on at least one cutting blade 56 and with the cuttingblade(s) 56 remaining part of the wafer 130. That is, after a bladehandle 24 has been mounted on at least one cutting blade 56, the wafer130 may be removed from the fixture 224 and without having separated anysuch cutting blade 56 (with a blade handle 24 mounted thereon) from thewafer 130. Thereafter, the various individual cutting blades 56 with ablade handle 24 mounted thereon may be separated from the remainder ofthe wafer 130.

[0133]FIGS. 20-23 illustrate a desirable configuration for allowingblades 54 and their corresponding blade handles 24 to be separated fromthe wafer 130. Various characteristics of one configuration of a bladeseparation fixture 300 is disclosed by FIGS. 20-23. Initially, the wafer130 is retained on the blade separation fixture 300 using a vacuum inthe same manner discussed above in relation to the blade handle mountingfixture 224 of FIGS. 14-19. Therefore, the bottom surface of the bladeseparation fixture 300 will similarly include an annular groove and anannular seal ring of the type used by the blade handle mounting fixture224, so that the base plate 220 may be attached to the fixture 300 inthe same manner as the blade mounting fixture 224 to define a vacuumchamber. The blade separation fixture 300 will then also include avacuum pull-down port, a vacuum linking port, and vacuum holes (notshown) of the type used by the blade mounting fixture 224 to draw avacuum for retaining the wafer 130 on the fixture 300. Additional vacuumports may be included on the upper surface 304 of the fixture 300 so asto retain the cutting tool 20 against the fixture 300 after itscorresponding blade 56 has been separated from the remainder of thewafer 130 (e.g., by including vacuum ports on a blade interface wall 352of the fixture 300).

[0134] An upper surface 304 of the blade separation fixture 300 isconfigured to suitably support the wafer 130 and maintain the same in afixed position while separating blades 56 from the remainder of thewafer 130 using the blade handle 24 previously mounted thereon (e.g., inaccordance with FIGS. 14-19). Generally, less than the entirety of thelower surface 138 of the wafer 130 is in actual contact with the uppersurface 304 of the fixture 300. Moreover, the upper surface 304 of thefixture 300 is configured so as to reduce the potential for damage tothe cutting edge 80 of each blade 56 while separating blades 56 from theremainder of the wafer 130. Finally, the upper surface 304 of thefixture 300 is configured so as to allow the bottom surface 48 of eachblade handle 24 to remain properly seated on the top surface 60 of itscorresponding blade 56 and in spaced relation to the fixture 300 (e.g.,so as to be in interfacing relation, or at least in closely spaced andparallel relation).

[0135] The upper surface 304 of the blade separation fixture 300includes a recess 312 having a base 320 that is vertically offset froman annular perimeter portion 308 of the upper surface 304. This base 320includes a planar wafer supporting surface 324 (which includes a bladesupport tab section 326 for interfacing with and supporting each bladesupport tab 131 of the wafer 130, which again provides theinterconnection between the blades 56 and the remainder of the wafer130), a plurality of cutting edge cavities 328, and a plurality ofregistrant/pivot cavities 340. An annular side wall 316 of the recess312 extends from the lower elevation wafer supporting surface 324 of thebase 320 of the recess 312 to the higher elevation annular perimeterportion 308 of the upper surface 304 of the fixture 300. This annularside wall 316 at least substantially approximates a perimeter of thewafer 130. Preferably, the annular side wall 316 and the perimeter ofthe wafer 130 are disposed in closely spaced relation (e.g., such thatthere is no more than about a 1 millimeter gap between any portion ofthe annular side wall 316 and a corresponding portion of the perimeterof the wafer 130).

[0136] At least one notch 305 is formed on the upper surface 304 of theblade separation fixture 300. Each notch 305 has a base 306 that isvertically offset from the wafer supporting surface 324 of the base 320of the recess 312. The base 305 of each notch 304 is disposed at a lowerelevation than the wafer supporting surface 324 of the base 320 of therecess 312. There is a thereby a space between the wafer 130 and thebase 306 of each notch 305. This space facilitates installation of thewafer 130 within the recess 312 of the blade separation fixture 300, aswell as the removal of the wafer 130 from the blade separation fixture300. Both manual (e.g., human operator) and a machine(s) arecontemplated for one or both of the installation and removal of thewafer 130 relative to the blade separation fixture 300.

[0137] Multiple features are incorporated in the configuration of thebase 320 of the recess 312 that is formed on the upper surface 304 ofthe blade separation fixture 300 for receipt of the wafer 130. One isthat the various vacuum holes (not shown) intersect with the base 320 ofthe recess 312. Preferably these vacuum holes intersect with the wafersupporting surface 324 of the base 320 of the recess 312. The wafersupporting surface 324 interfaces with the lower surface 138 of thewafer 130 to vertically support the wafer 130 while on the fixture 300.When the wafer 130 is disposed within the recess 312, a vacuum is pulledagainst the lower surface 138 of the wafer 130 through the variousvacuum holes, through the vacuum chamber, through the vacuum linkingport, and through the vacuum pull-down port by an appropriate source andin the same manner discussed above in relation to the blade handlemounting fixture 224. Suction forces thereby retain the lower surface138 of the wafer 130 against the planar wafer supporting surface 324 ofthe base 320 of the recess 312. Exactly how the suction or vacuum forceis generated and transferred to the wafer 130 to retain the same againstthe fixture 300 is not of particular importance. Other configurationsmay be utilized to generate this type of retention force for the wafer130 on the fixture 300.

[0138] Another feature of the base 320 of the recess 312 formed on theupper surface 304 of the blade separation fixture 300 is that itincludes multiple cutting edge cavities 328. Each cutting edge cavity328 is defined by a base 332 that is vertically spaced from the wafersupporting surface 324, and a side wall 336 that extends from the lowerelevation base 332 to the higher elevation wafer supporting surface 328(e.g., FIG. 22). In the illustrated embodiment, at least part of theside wall 336 of each cutting edge cavity 328 is disposed inperpendicular relation to the adjacent portion of the wafer supportingsurface 324 of the base 320 of the recess 312. Any appropriateorientation of the side wall 336 of the various cutting edge cavities328 may be utilized.

[0139] What is of principal importance in relation to each cutting edgecavity 328 is that they be sized and oriented on the upper surface 304of the fixture 300 such that the cutting edge 80 of each blade 56 willbe disposed over one of the cutting edge cavities 328 when the wafer 130is disposed within the recess 312 on the fixture 300. That is, thecutting edge 80 of each blade 56 is disposed in vertically spacedrelation to the blade separation fixture 300. In the illustratedembodiment, a given cutting edge cavity 328 accommodates the cuttingedge 80 for multiple blades 56. More specifically, a plurality of thecutting edge cavities 328 are disposed in equally spaced rows along thebase 320 of the recess 312. A given cutting edge cavity 328 accommodatesall of the blades 56 in a corresponding row on the wafer 130 (i.e.,provides a space below the cutting edge 80 of each blade 56 in a givenrow on the wafer 130) in the illustrated embodiment. It should beappreciated that the base 320 of the recess 312 could be configured suchthat the cutting edge 80 of each individual blade 56 had its ownindividual cutting edge cavity 328 (not shown).

[0140] Multiple registrant/pivot cavities 340 are also formed on thebase 320 of the recess 312 of the blade separation fixture 300. Eachregistrant/pivot cavity 340 is defined by a base 344 that is verticallyspaced from wafer supporting surface 324, a side wall 348 that extendsfrom the lower elevation base 344 to the higher elevation wafersupporting surface 324 (e.g., FIG. 22), and a blade interface wall 352.In the illustrated embodiment, at least part of the side wall 348 ofeach registrant/pivot cavity 340 is disposed in perpendicular relationto the adjacent portion of the wafer supporting surface 324 of the base320 of the recess 312. Any appropriate orientation of the side wall 348of the various registrant/pivot cavities 340 may be utilized. The bladeinterface wall 352 defines the forward boundary of the correspondingregistrant/pivot cavity 340 and is configured to interface with thebottom surface 64 of a blade 56 after being separated from the wafer 130in a manner that will be discussed in more detail below.

[0141] What is of principal importance in relation to eachregistrant/pivot cavity 340 is that they be sized and oriented on theupper surface 304 of the fixture 300 such that each registration cavity84 of each blade 56 will be disposed over one of the registrant/pivotcavities 340 when the wafer 130 is disposed within the recess 312 on thefixture 300. More specifically, each registrant/pivot cavity 340 shouldbe sized and oriented on the upper surface 304 of the fixture 300 suchthat the registrant/pivot cavity 340 is disposed below each registrant32 of each blade handle 24 to keep the bottom wall 40 of each registrant32 of each blade handle 24 in vertically spaced to the blade separationfixture 300. In the illustrated embodiment, a given registrant/pivotcavity 340 accommodates the registrants 32 of multiple cutting tools 20.More specifically, a plurality of the registrant/pivot cavities 340 aredisposed in equally spaced rows along the base 320 of the recess 312. Agiven registrant/pivot cavity 340 accommodates all of the blades 56 in acorresponding row on the wafer 130 (i.e., provides a space below theregistrant cavities 84 of each blade 56 in a given row on the wafer 130)in the illustrated embodiment. It should be appreciated that the base320 of the recess 312 could be configured such that each individualblade 56 had its own registrant/pivot cavity 340 (not shown).

[0142] The various blades 56 of the wafer 130 are suspended above theupper surface 304 of the blade separation fixture 300. That is, theblades 56 are disposed in vertically spaced relation to the underlyingbase 320 of the recess 312 of the blade separation fixture 300. Thoseportions of the wafer 130 that are disposed between the rows of blades56, as well as the outer perimeter of the wafer 130 (e.g., theabove-noted frame 128), interface with and are supported by the wafersupporting surface 324 of the fixture 300. Part of the wafer supportingsurface 324, namely structures in the form of a plurality of bladesupporting tab sections 326, interfaces with and supports the variousblade support tabs 131 that interconnect each of the blades 56 with theremainder of the wafer 130. Each blade support tab section 326 extendstoward, but not beyond, the score 132 of the corresponding blade supporttab 131. Preferably, the distal end of each blade support tab section326 is vertically aligned with a score 132.

[0143] A blade supporting surface 356 is located under the variousblades 56 in a given row of the wafer 130 at a location that islongitudinally between the corresponding cutting edge cavity 328 and thecorresponding registrant/pivot cavity 340. This blade supporting surface356 is a planar surface, is parallel with the wafer supporting surface324, and is recessed relative to the wafer supporting surface 324. Thatis, the blade supporting surface 356 is disposed at a lower elevationthan the wafer supporting surface 324. Overlying blades 56 are therebyinitially separated from the corresponding blade supporting surface 356by a space when the wafer 130 is in the fixture 300. The above-notedblade interface wall 352 extends from the blade supporting surface 356down to the base 344 of the corresponding registrant/pivot cavity 340.This blade interface wall 352 is a planar surface and is disposed at anangle α (FIG. 22) that is preferably within a range of about 15 degreesto about 30 degrees.

[0144] Summarizing the manner in which blades 56 are separated from theremainder of the wafer 130, the wafer 130 is disposed within the recess312 on the blade separation fixture 300 and in the manner illustrated inFIG. 20. Blade handles 24 typically will have been mounted to each ofthe blades 56 of the wafer 130 (utilizing the blade handle mountingfixture 224 discussed above in relation FIGS. 14-19) at this time,although any number of blades 56 may have a blade handle 224 mountedthereon and still utilize the blade separation fixture 300. A vacuum isdrawn so as to retain portions of the wafer 130 (e.g., its frame 128)against the wafer supporting surface 324 associated with the fixture 300by “pulling down” on portions of the wafer 130.

[0145] An at least generally downwardly directed force is then exertedon a particular blade handle 24 to separate its corresponding blade 56from the wafer 130 in one embodiment. In another embodiment, this forceis exerted directly on the blade 56. In either case, this may be donemanually (e.g., by hand) or by a machine(s) (e.g., manually activated orin an automated manner). In one embodiment, this force is directed so asto be least generally perpendicular to the top surface 60 of thecorresponding cutting blade 56. In any case, this type of force willcause the cutting blade 56 to deflect down toward the underlying bladesupporting surface 356 a sufficient degree to cause the blade 56 (withits blade handle 24 mounted thereon) to separate from the remainder ofthe wafer 130 at least generally along its corresponding score 132. Thisseparation preferably occurs before the blade 56 contacts the uppersurface 304 of the fixture 300. The cutting edge 80 moves toward, butdoes not contact, the underlying fixture 300 during this deflection. Onebenefit of the configuration of the rear surface 106 of the cuttingblade 56, namely by having the score 132 disposed within the notch 110on the back surface 106 of the blade 56, is that even if the fracturedoes not occur exactly along the score 132, the wafer surface exposed bythe fracture should still be longitudinally offset or spaced relative tothe first sections 112 of the rear surface 106 of the blade 56.

[0146] Once the blade 56 has separated from the wafer 130 in theabove-noted manner, the now separated blade 56 will continue in adownward direction until it contacts the underlying blade supportingsurface 356. Since the force is being exerted on the blade 56 throughits corresponding blade handle 24, the bottom surface 64 of the blade 56will tend to move toward and most likely interface with an underlyingblade interface wall 352. As noted above, suction forces or a vacuum maybe used to retain the bottom surface 64 of each cutting blade 56 againstan underlying blade interface wall 352 after being separated from theremainder of the wafer 130 in the above-noted manner. In any case, thisof course moves its corresponding cutting edge 80 further away from theblade separation fixture 300 (e.g., by a pivoting or pivotal-likemotion) so as to further reduce the potential for the cutting edge 80being damaged during separation of the blade 56 from the wafer 130. Agiven cutting edge 80 thereby first moves at least generally toward theunderlying fixture 300, and then at least generally away from thefixture 300.

[0147] The blade 56 again preferably moves into contact with the fixture300 only after separating from the wafer 130. It initially does so bylanding on the blade supporting surface 356 of the fixture 300. Thisblade supporting surface 356 is in effect a laterally extending beamabout which the blade 56 pivots into contact with the inclined bladeinterface wall 352. Therefore, the cutting edge 80 first moves toward,but not to, the fixture 300 when the blade 56 is being separated fromthe wafer 130. When the cutting blade 56 does contact the fixture 300after separation from the wafer 130 (the noted blade supporting surface356), the cutting edge 80 of the blade 56 is still spaced from thefixture 300 by being over/within a cutting edge cavity 328. The blade 56then pivots in a direction to move the cutting edge 80 away from thefixture 300, and in turn move its rear edge toward the fixture 300(e.g., a teeter-totter-like action). The bottom surface 64 of the blade56 will then interface with the inclined blade interface wall 352 suchthat the rear surface 106 of the blade 56 (or an associated edge) isdisposed on the base 352 of the registrant/pivot cavity 340 (e.g.,projecting at least generally downward) and further such that itscutting edge 80 is projecting at least generally upward and in spacedrelation to the fixture 300. Therefore, the cutting edge 80 alsopreferably never contacts the fixture 300.

[0148] It is contemplated that each of the blades 56 may be sequentiallyremoved from the remainder of the wafer 130 in the above-describedmanner (that is, one at a time), in one or more groups, or allsimultaneously. In this regard, multiple cutting blades 56 may be formedon the wafer 130 prior to being positioned on the blade separationfixture 300. A blade handle 24 may be mounted on each cutting blade 56as well before the wafer 130 is positioned on the fixture 300. Cuttingblades 56 may be sequentially separated from the remainder of the wafer130 in the above-noted manner, multiple cutting blades 56 may besimultaneously separated from the remainder of the wafer 130 in theabove-noted manner, or all cutting blades 56 formed on the wafer 130 maybe simultaneously separated from the remainder of the wafer 130 in theabove-noted manner. Regardless of how many cutting blades 56 are formedon the wafer 130 and the sequence of separating cutting blades 56 fromthe remainder of the wafer 130, the wafer 130 may be removed from thefixture 300 after at least one cutting blade 56 has been separated fromthe remainder of the wafer 130. All cutting blades 56 are preferablyseparated from the wafer 130 prior to removing the wafer 130 from thefixture 300. However, any cutting blade 56 that has been separated fromthe remainder of the wafer 130 may be removed from the fixture 300 priorto or after the wafer 300 is removed from the fixture 300.

[0149] The foregoing description of the present invention has beenpresented for purposes of illustration and description. Furthermore, thedescription is not intended to limit the invention to the form disclosedherein. Consequently, variations and modifications commensurate with theabove teachings, and skill and knowledge of the relevant art, are withinthe scope of the present invention. The embodiments describedhereinabove are further intended to explain best modes known ofpracticing the invention and to enable others skilled in the art toutilize the invention in such, or other embodiments and with variousmodifications required by the particular application(s) or use(s) of thepresent invention. It is intended that the appended claims be construedto include alternative embodiments to the extent permitted by the priorart.

What is claimed is:
 1. A method for fabricating a blade from asubstrate, comprising the steps of: executing a first etching stepcomprising etching said substrate to define a first cutting edge surfacefor a first blade; and executing a second etching step comprisingetching said substrate to define a first score, wherein said first blademay be separated from said substrate at least substantially along saidfirst score.
 2. A method, as claimed in claim 1, wherein: said substrateis ceramic.
 3. A method, as claimed in claim 1, wherein: said substrateis silicon.
 4. A method, as claimed in claim 1, wherein: said substrateis quartz.
 5. A method, as claimed in claim 1, wherein: said substrateis a single crystal material.
 6. A method, as claimed in claim 1,wherein: said first and second etching steps are simultaneously executedwith a single etchant.
 7. A method, as claimed in claim 6, wherein: saidsingle etchant is an anisotropic etchant.
 8. A method, as claimed inclaim 1, wherein: said first and second etching steps are each achemical etch.
 9. A method, as claimed in claim 1, further comprisingthe step of: defining a first cutting edge for said first blade usingsaid first etching step, wherein said first cutting edge is parallelwith a length dimension of said first score.
 10. A method, as claimed inclaim 1, further comprising the step of: executing a third etching stepcomprising etching through said substrate to define a first portion of aperimeter of said first blade, and etching through said substrate todefine a first blade support tab interconnecting said first blade with aremainder of said substrate, wherein said first score extends across atleast a portion of said first blade support tab.
 11. A method, asclaimed in claim 10, wherein: said first, second, and third etchingsteps are simultaneously executed with a single etchant.
 12. A method,as claimed in claim 10, wherein: said first score extends across only aportion of said first blade support tab.
 13. A method, as claimed inclaim 10, wherein: said first score comprises first and second ends,wherein said first and second ends are spaced inwardly from first andsecond edges, respectively, of said first blade support tab.
 14. Amethod, as claimed in claim 10, wherein: said third etching stepcomprises etching through said substrate to define a pair of notches ona first perimeter wall of said first blade, wherein said first bladesupport tab extends between said pair of notches, and wherein said firstscore is located so that said pair of notches are disposed beyond saidfirst score.
 15. A method, as claimed in claim 10, wherein: said secondetching step comprises locating said first score at a minimum widthlocation along said first blade support tab.
 16. A method, as claimed inclaim 1, wherein: said second etching step comprises etching into saidsubstrate a first amount that is within a range of about 2% to about 75%of a thickness of said substrate.
 17. A method, as claimed in claim 1,wherein: said second etching step comprises etching into said substratea first amount that is within a range of about 2% to about 5% of athickness of said substrate.
 18. A method, as claimed in claim 1,wherein: said second etching step comprises etching into said substratea first amount that is within a range of about 10 microns to about 30microns.
 19. A method, as claimed in claim 1, wherein: said secondetching step comprises etching through only a portion of a thickness ofsaid substrate.
 20. A method, as claimed in claim 1, wherein: saidsecond etching step comprises etching said substrate to define first andsecond planar score surfaces that intersect along a first line.
 21. Amethod, as claimed in claim 19, wherein: said first line is aligned witha crystallographic plane of said substrate.
 22. A method, as claimed inclaim 1, wherein: said second etching step comprises aligning said firstscore with a crystallographic plane of said substrate.
 23. A method, asclaimed in claim 1, wherein: said first score comprises a first scoresurface that is parallel with said first cutting edge surface.
 24. Amethod, as claimed in claim 1, further comprising the steps of: forminga first masking layer on said substrate; and transferring a blade maskonto said first masking layer, wherein each of said first and secondetching steps are executed through openings in said first masking layerin accordance with said blade mask.
 25. A method, as claimed in claim24, wherein: a first portion of said transferring step is selected fromthe group consisting of photomasking, masking, photolithography, andmicrophotolithography said first masking layer in accordance with saidblade mask, and wherein a second portion of said transferring step isselected from the group consisting of wet chemical etching, plasmaetching, reactive ion etching, and ion beam milling said first maskinglayer in accordance with said blade mask.
 26. A method for fabricating ablade from a substrate, comprising the steps of: executing a first etchcomprising etching through a substrate to define a first perimeterportion of a first blade, wherein said first perimeter portion extendsbetween first and second ends such that said first blade remains part ofsaid substrate between said first and second ends; executing a secondetch comprising etching through said substrate to define a first bladesupport tab, wherein a first free end of said first blade support tabmerges into said first blade between said first and second ends; andexecuting a third etch comprising etching a first score across at leasta portion of said first blade support tab.
 27. A method, as claimed inclaim 26, wherein: said substrate is ceramic.
 28. A method, as claimedin claim 26, wherein: said substrate is silicon.
 29. A method, asclaimed in claim 26, wherein: said substrate is quartz.
 30. A method, asclaimed in claim 26, wherein: said substrate is a single crystalmaterial.
 31. A method, as claimed in claim 26, wherein: said first,second, and third etches are simultaneously executed with a singleetchant.
 32. A method, as claimed in claim 31, wherein: said singleetchant is an anisotropic etchant.
 33. A method, as claimed in claim 26,wherein: said first, second, and third etches are each a chemical etch.34. A method, as claimed in claim 26, wherein: said first etch comprisesdefining a first cutting edge for said first blade, wherein said firstcutting edge is parallel with a length dimension of said first score.35. A method, as claimed in claim 26, wherein: said first score extendsacross only a portion of said first blade support tab.
 36. A method, asclaimed in claim 26, wherein: said first score comprises first andsecond ends, wherein each of said first and second ends are spacedinwardly from first and second side edges of said first blade supporttab.
 37. A method, as claimed in claim 26, wherein: said first etchcomprises etching through said substrate to define a pair of notches ona first perimeter wall of said first blade, wherein said first bladesupport tab extends between said pair of notches, and wherein said firstscore is located so that said pair of notches are disposed beyond saidfirst score.
 38. A method, as claimed in claim 26, wherein: said thirdetch comprises etching into said substrate a first amount that is withina range of about 2% to about 75% of a thickness of said substrate.
 39. Amethod, as claimed in claim 26, wherein: said third etch comprisesetching into said substrate a first amount that is within a range ofabout 2% to about 5% of a thickness of said substrate.
 40. A method, asclaimed in claim 26, wherein: said third etch comprises etching intosaid substrate a first amount that is within a range of about 10 micronsto about 30 microns.
 41. A method, as claimed in claim 26, wherein: saidthird etch comprises etching through only a portion of a thickness ofsaid substrate.
 42. A method, as claimed in claim 26, wherein: saidthird etch comprises etching said substrate to define first and secondplanar score surfaces that intersect along a first line.
 43. A method,as claimed in claim 42, wherein: said first line is aligned with acrystallographic plane of said substrate.
 44. A method, as claimed inclaim 26, wherein: said third etch comprises aligning said first scorewith a crystallographic plane of said substrate.
 45. A method, asclaimed in claim 26, wherein: said first score comprises a first scoresurface that is parallel with a first cutting edge surface of said firstblade defined by said first etch.
 46. A method, as claimed in claim 26,wherein: said third etch comprises locating said first score at aminimum width location along said first blade support tab.
 47. A method,as claimed in claim 26, further comprising the steps of: forming a firstmasking layer on said substrate; and transferring a blade mask onto saidfirst masking layer, wherein each of said first, second, and thirdetches are executed through openings in said first masking layer inaccordance with said blade mask.
 48. A method, as claimed in claim 47,wherein: a first portion of said transferring step is selected from thegroup consisting of photomasking, masking, photolithography, andmicrophotolithography said first masking layer in accordance with saidblade mask, and wherein, a second portion of said transferring step isselected from the group consisting of wet chemical etching, plasmaetching, reactive ion etching, and ion beam milling said first maskinglayer in accordance with said blade mask.
 49. A method for fabricating ablade from a substrate, comprising the steps of: creating at least oneopening that extends completely through said substrate, wherein saidcreating step comprises defining a first perimeter portion of a firstblade, wherein said first perimeter portion extends between first andsecond ends such that said first blade remains part of said substratebetween said first and second ends; and defining a first score havingfirst and second ends, wherein each of said first and second ends arespaced from any said opening from said creating step.
 50. A method, asclaimed in claim 49, wherein: said substrate is ceramic.
 51. A method,as claimed in claim 49, wherein: said substrate is silicon.
 52. Amethod, as claimed in claim 49, wherein: said substrate is quartz.
 53. Amethod, as claimed in claim 49, wherein: said substrate is a singlecrystal material.
 54. A method, as claimed in claim 49, wherein: saidcreating step comprises etching.
 55. A method, as claimed in claim 54,wherein: said etching step is an anisotropic etch.
 56. A method, asclaimed in claim 49, wherein: said defining a first perimeter portionstep comprises defining a first cutting edge, wherein said defining afirst score step comprises disposing said first score in parallelrelation with said first cutting edge.
 57. A method, as claimed in claim49, wherein: said defining a first perimeter portion step comprisesdefining a planar first cutting edge surface, wherein said defining afirst score step comprises defining a planar first score surface,wherein said first cutting edge surface and said first score surface areparallel.
 58. A method, as claimed in claim 49, wherein: said creatingstep further comprising defining a first blade support tab thatinterconnects said first blade with a remainder of said substrate,wherein said first score extends across at least a portion of said firstblade support tab.
 59. A method, as claimed in claim 58, wherein: saidfirst score extends across only a portion of said first blade supporttab.
 60. A method, as claimed in claim 58, wherein: said first andsecond ends of said first score are spaced inwardly from first andsecond side edges, respectively, of said first blade support tab.
 61. Amethod, as claimed in claim 58, wherein: said defining a first perimeterportion step comprises defining a pair of notches on a first perimeterwall of said first blade, wherein said first blade support tab extendsbetween said pair of notches, wherein said first score is located sothat said pair of notches are disposed beyond said first score.
 62. Amethod, as claimed in claim 58, wherein: said defining a first scorestep comprises locating said first score at a minimum width locationalong said first blade support tab.
 63. A method, as claimed in claim49, wherein: said defining a first score step comprises etching.
 64. Amethod, as claimed in claim 49, wherein: said defining a first scorestep comprises extending said first score to a depth within saidsubstrate that is within a range of about 2% to about 75% of a thicknessof said substrate.
 65. A method, as claimed in claim 49, wherein: saiddefining a first score step comprises extending said first score to adepth within said substrate that is within a range of about 2% to about5% of a thickness of said substrate.
 66. A method, as claimed in claim49, wherein: said defining a first score step comprises extending saidfirst score to a depth within said substrate that is within a range ofabout 10 microns to about 30 microns.
 67. A method, as claimed in claim49, wherein: said defining a first score step comprises extending saidfirst score through only a portion of a thickness of said substrate. 68.A method, as claimed in claim 49, wherein: said defining a first scorestep comprises defining first and second planar score surfaces thatintersect along a first line.
 69. A method, as claimed in claim 68,wherein: said first line is aligned with a crystallographic plane ofsaid substrate.
 70. A method, as claimed in claim 49, wherein: saiddefining a first score step comprises aligning said first score with acrystallographic plane of said substrate.
 71. A method, as claimed inclaim 49, wherein: said creating step and said defining a first scorestep each comprise etching said substrate.
 72. A method, as claimed inclaim 71, further comprising the steps of: forming a first masking layeron said substrate; and transferring a blade mask onto said first maskinglayer, wherein said etching step is executed through openings in saidfirst masking layer in accordance with said blade mask.
 73. A method, asclaimed in claim 72, wherein: a first portion of said transferring stepis selected from the group consisting of photomasking, masking,photolithography, and microphotolithography said first masking layer inaccordance with said blade mask, and wherein a second portion of saidtransferring step is selected from the group consisting of wet chemicaletching, plasma etching, reactive ion etching, and ion beam milling saidfirst masking layer in accordance with said blade mask.
 74. A method forfabricating a blade from a substrate, comprising the steps of: creatingat least one opening that extends completely through said substrate,wherein said creating step comprises defining a first perimeter portionof a first blade, wherein said first perimeter portion extends betweenfirst and second ends such that said first blade remains part of saidsubstrate between said first and second ends; and defining a first scoreon said substrate that is associated with said first blade, wherein saiddefining a first score step comprises using a same technique as saidcreating step, and wherein said first blade may be separated from aremainder of said substrate using said first score.
 75. A method forfabricating a blade from a substrate, comprising the steps of: creatingat least one opening that extends completely through said substrate,wherein said creating step comprises defining a first perimeter portionof a first blade, wherein said first perimeter portion extends betweenfirst and second ends such that said first blade remains part of saidsubstrate between said first and second ends; and defining a first scoreon said substrate that is associated with said first blade, wherein saiddefining a first score step is executed during said creating step, andwherein said first blade may be separated from a remainder of saidsubstrate using said first score.
 76. A method for fabricating a bladefrom a substrate, comprising the steps of: creating at least one openingthat extends completely through said substrate, wherein said creatingstep comprises defining a first perimeter portion of a first blade,wherein said first perimeter portion extends between first and secondends such that said first blade remains part of said substrate betweensaid first and second ends, wherein said first perimeter portioncomprises a first cutting edge and an oppositely disposed rear end; anddefining a first score on said substrate that is associated with saidfirst blade, wherein said first score is located between a rearwardmostportion of said rear end and said first cutting edge, and wherein saidfirst blade may be separated from a remainder of said substrate usingsaid first score.